Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8926108

J. Kirdoda, D. Dumas, K. Kuzmenko, P. Vines, Z. Greener, R. Millar, M. Mirza, G. Buller, D. Paul

引用次数: 1

Abstract

Ge-on-Si single-photon avalanche diode (SPAD) detectors have demonstrated a high single-photon detection efficiency of 38% at a wavelength of 1310 nm when operated at a temperature of 125 K. These devices exhibit reduced afterpulsing compared to InGaAs/InP SPADs under nominally identical operating conditions.

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盖革模式硅基锗单光子雪崩二极管探测器

锗硅单光子雪崩二极管(SPAD)探测器在工作温度为125 K时，在1310 nm波长下的单光子探测效率高达38%。与InGaAs/InP spad相比，这些器件在名义上相同的操作条件下表现出更少的后脉冲。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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