60纳米吸收覆盖扩展和l波段量子效率提高的锗光电探测器

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853916

Xin Guo, K. Lee, Yiding Lin, D. Ma, J. Michel, C. S. Tan, Hong Wang, Rui‐Tao Wen, Jin Zhou

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引用次数: 0

摘要

绝缘体上锗(GOI)金属-半导体-金属(MSM)光电探测器的吸收覆盖范围扩大了60 nm, l波段的量子效率提高了约2倍。

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Germanium Photodetectors with 60-nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement across L-Band

Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ∼2× enhancement on the quantum efficiency across the L-band.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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