CMOS兼容PECVD沉积富硅氮化物(SRN)的光学Kerr非线性

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8926104

H. Cong, Qi Feng, Jieyin Zhang, Wenqi Wei, Ting Wang, Jianjun Zhang

{"title":"CMOS兼容PECVD沉积富硅氮化物(SRN)的光学Kerr非线性","authors":"H. Cong, Qi Feng, Jieyin Zhang, Wenqi Wei, Ting Wang, Jianjun Zhang","doi":"10.1109/GROUP4.2019.8926104","DOIUrl":null,"url":null,"abstract":"CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10−17 m2W−1, which is one order of magnitude higher than Si waveguides.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)\",\"authors\":\"H. Cong, Qi Feng, Jieyin Zhang, Wenqi Wei, Ting Wang, Jianjun Zhang\",\"doi\":\"10.1109/GROUP4.2019.8926104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10−17 m2W−1, which is one order of magnitude higher than Si waveguides.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2019.8926104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2019.8926104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用等离子体增强化学气相沉积方法制备了具有高反射指数的CMOS兼容富氮化硅(SRN)。测量并提取了SRN波导的Kerr非线性系数n2，其值为2.8×10−17 m2W−1，比Si波导高一个数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)

CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10−17 m2W−1, which is one order of magnitude higher than Si waveguides.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量