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2019 IEEE 16th International Conference on Group IV Photonics (GFP)最新文献

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InAs QDs Monolithically Grown on COMS Compatible Si (001) and SOI Platform with Strong Emission at 1300 nm and 1550 nm 在COMS兼容Si(001)和SOI平台上单片生长具有1300 nm和1550 nm强发射的InAs量子点
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853900
Ting Wang, Wenqi Wei, Jianjun Zhang
{"title":"InAs QDs Monolithically Grown on COMS Compatible Si (001) and SOI Platform with Strong Emission at 1300 nm and 1550 nm","authors":"Ting Wang, Wenqi Wei, Jianjun Zhang","doi":"10.1109/GROUP4.2019.8853900","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853900","url":null,"abstract":"Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on U-shape patterned Si (001) and SOI substrates. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, high-quality GaAs layers are obtained with threading dislocation density approximately ∼ 106 cm−2 via electron channeling contrast image (ECCI) method. Then strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) and SOI substrates, respectively.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"358 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131651187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Performance Vertical Interlayer Coupler for Multilayer Silicon Nitride-on-Silicon Photonic Platform 用于多层氮化硅光子平台的高性能垂直层间耦合器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853942
Lirong Cheng, H. Fu, Xin Mu, X. Tu, Sailong Wu
{"title":"High-Performance Vertical Interlayer Coupler for Multilayer Silicon Nitride-on-Silicon Photonic Platform","authors":"Lirong Cheng, H. Fu, Xin Mu, X. Tu, Sailong Wu","doi":"10.1109/GROUP4.2019.8853942","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853942","url":null,"abstract":"We propose a vertical interlayer coupler for optical interconnections in multilayer silicon nitride-on-silicon photonic circuits with coupling efficiency of 96.0%. The coupler has a compact size of 170 μm in length and exhibits high performance in an ultra-broad bandwidth.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123145405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet 基于多层氮化硅的耦合器集成到硅光子平台中，标准SMF与as - dice芯片边缘面之间的耦合损耗为0.5 dB
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853932
R. Tummidi, M. Webster
{"title":"Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet","authors":"R. Tummidi, M. Webster","doi":"10.1109/GROUP4.2019.8853932","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853932","url":null,"abstract":"We experimentally demonstrate <0.5 dB coupling loss with <0.3 dB variation over the O-band for both polarizations between an integrated silicon photonics platform with an as-diced edge facet and butt-coupled standard single mode fiber.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gate Oxide Process for III-V / Si Hybrid MOS Capacitor Modulator III-V / Si杂化MOS电容器调制器的栅氧化工艺
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853953
Y. Désières, K. Hassan, S. Malhouitre, V. Muffato, V. Ramez
{"title":"Gate Oxide Process for III-V / Si Hybrid MOS Capacitor Modulator","authors":"Y. Désières, K. Hassan, S. Malhouitre, V. Muffato, V. Ramez","doi":"10.1109/GROUP4.2019.8853953","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853953","url":null,"abstract":"Progresses in Photonic Integrated Circuits (PICs) demand development of high performance photonic devices, including phase modulators. Capacitive phase modulators present high efficiency and low consumption, at the cost of technical challenges for their integration in PICs. A 200mm wafer process flow for thin gate oxide employed for MOSCAP modulators fabrication is presented here.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121035346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectral Broadening Enhancement in Graphene Integrated Si Waveguides 石墨烯集成硅波导的光谱展宽增强
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853872
H. Cong, Qi Feng, Jianhuan Wang, Ting Wang, Wenqi Wei, Bin Zhang, Jianjun Zhang
{"title":"Spectral Broadening Enhancement in Graphene Integrated Si Waveguides","authors":"H. Cong, Qi Feng, Jianhuan Wang, Ting Wang, Wenqi Wei, Bin Zhang, Jianjun Zhang","doi":"10.1109/GROUP4.2019.8853872","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853872","url":null,"abstract":"Silicon-on-insulator waveguides covered with graphene in length of 60 μm have been fabricated and investigated. Self phase modulation were carried out, and enhanced nonlinear phase shift, Kerr nonlinearity and figure-of-merit have been confirmed in graphene-silicon waveguides by experiments and simulations.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131261513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Mode-Selective Modulation Device for on-Chip Optical Interconnect 片上光互连用硅模选择调制装置
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926102
Hao Jia, Shanglin Yang, Xin Fu, Ting Zhou, Lei Zhang, Lin Yang
{"title":"Silicon Mode-Selective Modulation Device for on-Chip Optical Interconnect","authors":"Hao Jia, Shanglin Yang, Xin Fu, Ting Zhou, Lei Zhang, Lin Yang","doi":"10.1109/GROUP4.2019.8926102","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926102","url":null,"abstract":"We propose and demonstrate a scalable mode-selective modulation device for on-chip optical interconnect. We can selectively modulate arbitrary mode channels as requirement. The insertion losses for all modes are less than 2.1 dB, and the inter-mode crosstalk is lower than −19.7 dB.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115232423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proposal and Simulation of a Low Loss, Highly Efficient Monolithic III-V/Si Optical Phase Shifter 一种低损耗、高效率的单片III-V/Si光学移相器的设计与仿真
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853903
Y. Ban, Sanghyeon Kim, Younghyun Kim, S. Lardenois, M. Pantouvaki, J. Van Campenhout, D. Yudistira
{"title":"Proposal and Simulation of a Low Loss, Highly Efficient Monolithic III-V/Si Optical Phase Shifter","authors":"Y. Ban, Sanghyeon Kim, Younghyun Kim, S. Lardenois, M. Pantouvaki, J. Van Campenhout, D. Yudistira","doi":"10.1109/GROUP4.2019.8853903","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853903","url":null,"abstract":"Carrier-depletion monolithic III-V/Si optical phase modulators are proposed and numerically investigated. Thanks to the larger carrier-induced refractive index change of the III-Vs compared to Si, the III-V/Si phase modulator is predicted to achieve 0.07-Vcm modulation efficiency at 16-dB/cm optical loss at 1310-nm wavelengths.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117173369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity 低温灵敏度的III-V/Si MOS电容器马赫曾德调制器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926127
T. Hiraki, T. Aihara, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, S. Matsuo
{"title":"III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity","authors":"T. Hiraki, T. Aihara, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, S. Matsuo","doi":"10.1109/GROUP4.2019.8926127","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926127","url":null,"abstract":"We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08–0.11 Vcm in the C and L band at 25–80 degrees Celsius.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"210 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115800961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain 宽增益范围硅锗雪崩光电二极管的紧凑电路模型
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853910
R. Beausoleil, M. Fiorentino, Zhihong Huang, D. Liang, W. Sorin, Binhao Wang, Xiaoge Zeng
{"title":"A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain","authors":"R. Beausoleil, M. Fiorentino, Zhihong Huang, D. Liang, W. Sorin, Binhao Wang, Xiaoge Zeng","doi":"10.1109/GROUP4.2019.8853910","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853910","url":null,"abstract":"A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115425041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet 基于多层氮化硅的耦合器集成到硅光子平台中，标准SMF与as - dice芯片边缘面之间的耦合损耗为0.5 dB
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925656
R. Tummidi, M. Webster
{"title":"Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet","authors":"R. Tummidi, M. Webster","doi":"10.1109/GROUP4.2019.8925656","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925656","url":null,"abstract":"We experimentally demonstrate <0.5 dB coupling loss with <0.3 dB variation over the O-band for both polarizations between an integrated silicon photonics platform with an as-diced edge facet and butt-coupled standard single mode fiber.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123301134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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