低温灵敏度的III-V/Si MOS电容器马赫曾德调制器

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8926127

T. Hiraki, T. Aihara, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, S. Matsuo

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引用次数: 0

摘要

我们展示了一种具有低温灵敏度的超高效率III-V/Si金属氧化物半导体电容器马赫-曾德尔调制器。在25-80℃下，该器件在C和L波段的调制效率为0.08-0.11 Vcm。

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III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08–0.11 Vcm in the C and L band at 25–80 degrees Celsius.

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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