宽增益范围硅锗雪崩光电二极管的紧凑电路模型

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853910

R. Beausoleil, M. Fiorentino, Zhihong Huang, D. Liang, W. Sorin, Binhao Wang, Xiaoge Zeng

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引用次数: 1

摘要

建立了硅锗雪崩光电二极管电路模型，包括载流子传输时间、雪崩积累时间和电寄生特性。在宽增益范围内准确捕获电和光学动态。模拟和测量的50 Gb/s PAM4眼图之间实现了良好的匹配。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain

A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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