基于多层氮化硅的耦合器集成到硅光子平台中，标准SMF与as - dice芯片边缘面之间的耦合损耗为0.5 dB

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8925656

R. Tummidi, M. Webster

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引用次数: 0

摘要

我们通过实验证明，在集成硅光子学平台和对接耦合的标准单模光纤之间，在o波段的两个偏振方向上，耦合损耗<0.5 dB，变化<0.3 dB。

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Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet

We experimentally demonstrate <0.5 dB coupling loss with <0.3 dB variation over the O-band for both polarizations between an integrated silicon photonics platform with an as-diced edge facet and butt-coupled standard single mode fiber.

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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