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2019 IEEE 16th International Conference on Group IV Photonics (GFP)最新文献

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Temperature Characteristics of Photonic-Crystal Lasers Coupled to Si Waveguides 硅波导耦合光子晶体激光器的温度特性
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925968
K. Takeda, T. Fujii, H. Nishi, E. Kuramochi, A. Shinya, M. Notomi, T. Tsuchizawa, T. Kakitsuka, S. Matsuo
{"title":"Temperature Characteristics of Photonic-Crystal Lasers Coupled to Si Waveguides","authors":"K. Takeda, T. Fujii, H. Nishi, E. Kuramochi, A. Shinya, M. Notomi, T. Tsuchizawa, T. Kakitsuka, S. Matsuo","doi":"10.1109/GROUP4.2019.8925968","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925968","url":null,"abstract":"We experimentally investigated the temperature characteristics of photonic-crystal lasers coupled to Si waveguides. Output light was successfully coupled to the Si waveguides. The laser had a threshold current of 0.023 mA, and it operated at temperatures up to 63.9 degrees Celsius.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121769220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si3N4 Waveguide-Coupled Microdisk Resonators with a Quality Factor of 107 质量因子为107的氮化硅波导耦合微盘谐振器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853929
A. Poon, Kaiyi Wu
{"title":"Si3N4 Waveguide-Coupled Microdisk Resonators with a Quality Factor of 107","authors":"A. Poon, Kaiyi Wu","doi":"10.1109/GROUP4.2019.8853929","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853929","url":null,"abstract":"We design and fabricate dispersion-engineered ∼830nm-thick Si<sub>3</sub>N<sub>4</sub> waveguide-coupled microdisks. Our resonators show a loaded quality (Q)-factor of ∼1×10<sup>7</sup>. We observe optical parametric oscillations in a 345μm-radius microdisk with a threshold pump power of ∼50 mW in the waveguide.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"1949-209X 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131006882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced L-Band Optical Absorption in Ge Grown on Si-on-Quartz Substrate 硅-石英衬底生长Ge的l波段光吸收增强
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853882
Y. Ishikawa, J. Matsui, M. Nishimura, Kyosuke Noguchi, Y. Tsusaka
{"title":"Enhanced L-Band Optical Absorption in Ge Grown on Si-on-Quartz Substrate","authors":"Y. Ishikawa, J. Matsui, M. Nishimura, Kyosuke Noguchi, Y. Tsusaka","doi":"10.1109/GROUP4.2019.8853882","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853882","url":null,"abstract":"Optical absorption in the L band (1.565–1.625 μm) of optical communication is significantly enhanced in Ge, which is grown on Si-on-quartz wafer as the substrate. This property is effective for photodetectors in terms of higher-capacity communications utilizing the wavelength-division multiplexing.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130731132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Slow-Light in Silicon Photonic Subwavelength Grating Waveguides 硅光子亚波长光栅波导中的可调谐慢光
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/group4.2019.8925650
Antoine Gervais, Philippe Jean, W. Shi, S. Larochelle
{"title":"Tunable Slow-Light in Silicon Photonic Subwavelength Grating Waveguides","authors":"Antoine Gervais, Philippe Jean, W. Shi, S. Larochelle","doi":"10.1109/group4.2019.8925650","DOIUrl":"https://doi.org/10.1109/group4.2019.8925650","url":null,"abstract":"Slow-light is experimentally demonstrated in subwavelength grating waveguides integrated on a silicon photonic chip. At the band-edge, a group index up to 30 is measured. We show that the band-edge wavelength varies linearly with the subwavelength grating period and can be shifted by thermal tuning.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133381110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN) CMOS兼容PECVD沉积富硅氮化物(SRN)的光学Kerr非线性
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853955
H. Cong, Qi Feng, Ting Wang, Wenqi Wei, Jianjun Zhang, Jieyin Zhang
{"title":"Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)","authors":"H. Cong, Qi Feng, Ting Wang, Wenqi Wei, Jianjun Zhang, Jieyin Zhang","doi":"10.1109/GROUP4.2019.8853955","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853955","url":null,"abstract":"CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10<sup>−17</sup> m<sup>2</sup>W<sup>−1</sup>, which is one order of magnitude higher than Si waveguides.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132744168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities 拉伸应变GeSn微磁盘腔中的超低阈值连续波激光
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853883
A. Elbaz, Z. Ikonić, F. Boeuf, P. Boucaud, Detlev Grützmacher, D. Buca, M. E. Kurdi, N. V. D. Driesch, K. Pantzas, X. Checoury, Etienne Herth, S. Sauvage, Gilles Patriarche, I. Sagnes, J. Hartmann
{"title":"Ultra-Low Threshold CW Lasing in Tensile Strained GeSn Microdisk Cavities","authors":"A. Elbaz, Z. Ikonić, F. Boeuf, P. Boucaud, Detlev Grützmacher, D. Buca, M. E. Kurdi, N. V. D. Driesch, K. Pantzas, X. Checoury, Etienne Herth, S. Sauvage, Gilles Patriarche, I. Sagnes, J. Hartmann","doi":"10.1109/GROUP4.2019.8853883","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853883","url":null,"abstract":"GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. These past few years the research were consequently focused on incorporating the highest Sn content as possible to achieve high directness and high temperature laser operation. This unfortunately results is increased threshold. In this contribution we discuss the advantages in combining tensile strain engineering with lower Sn content alloys. This approach is motivated by the higher material quality in lower Sn content. The case with Sn content as small as 5.4 at.% Sn will be discussed. The alloy is initially compressively strained, and exhibits an indirect band gap that is turned to direct by applying tensile strain. A specific technology based on transfer On Insulator stressor layer on metal was developed to address strain engineering, thermal cooling and defective interface with the Ge-VS. This led to lasing in Ge0.95Sn0.05 microdisk cavities with dramatically reduced thresholds, by two order of magnitude, as compared to the case with high Sn alloys and as consequence enables cw operation.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"9 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133851842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Loss Silicon Technology for High-Q Bright Quantum Sources 高q亮度量子光源的低损耗硅技术
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/group4.2019.8853895
D. Bajoni, H. El Dirani, M. Galli, F. Garrisi, J. Hartmann, M. Liscidini, C. Monat, E. Pargon, C. Petit-Etienne, F. Sabattoli, C. Sciancalepore
{"title":"Low-Loss Silicon Technology for High-Q Bright Quantum Sources","authors":"D. Bajoni, H. El Dirani, M. Galli, F. Garrisi, J. Hartmann, M. Liscidini, C. Monat, E. Pargon, C. Petit-Etienne, F. Sabattoli, C. Sciancalepore","doi":"10.1109/group4.2019.8853895","DOIUrl":"https://doi.org/10.1109/group4.2019.8853895","url":null,"abstract":"Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114773343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
S-C-L Band Coarse Wavelength Division Multiplexing on Ultra Silicon Rich Nitride Platform 超富氮化硅平台S-C-L波段粗波分复用
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925621
G. Chen, P. Xing, Hongwei Gao, J. Choi, D. Ng, D. Tan
{"title":"S-C-L Band Coarse Wavelength Division Multiplexing on Ultra Silicon Rich Nitride Platform","authors":"G. Chen, P. Xing, Hongwei Gao, J. Choi, D. Ng, D. Tan","doi":"10.1109/GROUP4.2019.8925621","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925621","url":null,"abstract":"An on-chip Coarse wavelength Division Multiplexing (CWDM) has been designed, fabricated and experimentally measured, yielding 9 multiplexed wavelength channels spanning S+C+L band. The average channel crosstalk is −25 dB. All channels cover the CWDM central wavelengths stipulated by ITU standard.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116428683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light Emission Driven by Fano Resonances in Symmetry-Breaking Silicon Metasurface 对称破缺硅超表面中范诺共振驱动的光发射
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853898
Chengcong Cui, J. Xia, Shuai Yuan, C. Zeng
{"title":"Light Emission Driven by Fano Resonances in Symmetry-Breaking Silicon Metasurface","authors":"Chengcong Cui, J. Xia, Shuai Yuan, C. Zeng","doi":"10.1109/GROUP4.2019.8853898","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853898","url":null,"abstract":"A light-emitting metasurface that combines asymmetric silicon nanorod array with embedded Ge quantum dots is demonstrated. Light emission intensity enhancement and specific polarization of far-field radiation driven by the symmetry-breaking induced Fano resonances are observed and discussed.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122065601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automatic Tuning and Locking of Hitless Add-Drop Filters 自动调整和锁定无命中添加-删除过滤器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853877
D. Aguiar, Emanuele Guglielmi, A. Melloni, M. Milanizadeh, F. Morichetti, M. Petrini, F. Toso, F. Zanetto
{"title":"Automatic Tuning and Locking of Hitless Add-Drop Filters","authors":"D. Aguiar, Emanuele Guglielmi, A. Melloni, M. Milanizadeh, F. Morichetti, M. Petrini, F. Toso, F. Zanetto","doi":"10.1109/GROUP4.2019.8853877","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853877","url":null,"abstract":"Automatic tuning and locking of silicon microring resonator filters with hitless functionality in multichannel WDM system is presented. The filter spectral shape is optimized to match the signal spectral shape. A technique to cancel thermal crosstalk effects is exploited to automatically create filters lookup table.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"1949-209X 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129325101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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