高q亮度量子光源的低损耗硅技术

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/group4.2019.8853895

D. Bajoni, H. El Dirani, M. Galli, F. Garrisi, J. Hartmann, M. Liscidini, C. Monat, E. Pargon, C. Petit-Etienne, F. Sabattoli, C. Sciancalepore

{"title":"高q亮度量子光源的低损耗硅技术","authors":"D. Bajoni, H. El Dirani, M. Galli, F. Garrisi, J. Hartmann, M. Liscidini, C. Monat, E. Pargon, C. Petit-Etienne, F. Sabattoli, C. Sciancalepore","doi":"10.1109/group4.2019.8853895","DOIUrl":null,"url":null,"abstract":"Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-Loss Silicon Technology for High-Q Bright Quantum Sources\",\"authors\":\"D. Bajoni, H. El Dirani, M. Galli, F. Garrisi, J. Hartmann, M. Liscidini, C. Monat, E. Pargon, C. Petit-Etienne, F. Sabattoli, C. Sciancalepore\",\"doi\":\"10.1109/group4.2019.8853895\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.\",\"PeriodicalId\":221282,\"journal\":{\"name\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 16th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/group4.2019.8853895\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/group4.2019.8853895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

由于高温氢退火，原子尺度的侧壁粗糙度平滑是低损耗(4 × 105)硅微谐振器通过自发四波混频实现片上单光子明亮量子源的关键实现因素。

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Low-Loss Silicon Technology for High-Q Bright Quantum Sources

Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.

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来源期刊

2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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