硅-石英衬底生长Ge的l波段光吸收增强

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853882

Y. Ishikawa, J. Matsui, M. Nishimura, Kyosuke Noguchi, Y. Tsusaka

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引用次数: 0

摘要

在Si-on-quartz晶片上生长的Ge中，光通信L波段(1.565 ~ 1.625 μm)的光吸收显著增强。这种特性对于利用波分复用的高容量通信的光电探测器是有效的。

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Enhanced L-Band Optical Absorption in Ge Grown on Si-on-Quartz Substrate

Optical absorption in the L band (1.565–1.625 μm) of optical communication is significantly enhanced in Ge, which is grown on Si-on-quartz wafer as the substrate. This property is effective for photodetectors in terms of higher-capacity communications utilizing the wavelength-division multiplexing.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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