CMOS兼容PECVD沉积富硅氮化物(SRN)的光学Kerr非线性

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853955

H. Cong, Qi Feng, Ting Wang, Wenqi Wei, Jianjun Zhang, Jieyin Zhang

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引用次数: 1

摘要

采用等离子体增强化学气相沉积方法制备了具有高反射指数的CMOS兼容富氮化硅(SRN)。测量并提取了SRN波导的Kerr非线性系数n2，其值为2.8×10−17 m2W−1，比Si波导高一个数量级。

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Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)

CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10⁻¹⁷ m²W⁻¹, which is one order of magnitude higher than Si waveguides.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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