一种低损耗、高效率的单片III-V/Si光学移相器的设计与仿真

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853903

Y. Ban, Sanghyeon Kim, Younghyun Kim, S. Lardenois, M. Pantouvaki, J. Van Campenhout, D. Yudistira

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引用次数: 6

摘要

提出了载流子耗尽单片III-V/Si光相位调制器，并对其进行了数值研究。由于与Si相比，III-V/Si的载流子诱导折射率变化更大，预计在1310 nm波长下，III-V/Si相位调制器在16 db /cm光损耗下实现0.07 vcm调制效率。

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Proposal and Simulation of a Low Loss, Highly Efficient Monolithic III-V/Si Optical Phase Shifter

Carrier-depletion monolithic III-V/Si optical phase modulators are proposed and numerically investigated. Thanks to the larger carrier-induced refractive index change of the III-Vs compared to Si, the III-V/Si phase modulator is predicted to achieve 0.07-Vcm modulation efficiency at 16-dB/cm optical loss at 1310-nm wavelengths.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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