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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Efficient and stable perovskite-based optoelectronic devices 高效稳定的钙钛矿基光电器件
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437411
T. Matsushima, Chuanjiang Qin, T. Fujihara, C. Adachi
{"title":"Efficient and stable perovskite-based optoelectronic devices","authors":"T. Matsushima, Chuanjiang Qin, T. Fujihara, C. Adachi","doi":"10.23919/AM-FPD.2018.8437411","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437411","url":null,"abstract":"We show that the introduction of benzoquinone (BQ) into an organic-inorganic perovskite film greatly enhances both power conversion efficiency and stability of solar cells. The morphology and crystal quality of the perovskite films were improved because intermolecular interaction between methylammonium iodide and BQ slowed the rate of perovskite crystal formation. Further, electron transfer from perovskite to BQ reduces charge recombination losses, and the oxidizing ability of BQ effectively suppresses the formation of metallic lead, a source of carrier traps, under continuous solar irradiation. Through BQ addition, the conversion efficiency was enhanced from 10.7% to 15.6% and lifetime extended about twenty-six times.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125551087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advantage of Head-Up Display for Automobiles 汽车平视显示器的优势
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/am-fpd.2018.8437396
Toru Tsuchida, Takeshi Yachida, Yuki Masuya
{"title":"Advantage of Head-Up Display for Automobiles","authors":"Toru Tsuchida, Takeshi Yachida, Yuki Masuya","doi":"10.23919/am-fpd.2018.8437396","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437396","url":null,"abstract":"In this paper, we evaluate a harmful influence on normal driving behavior of Head-Up Display (HUD). It is one of major concerns in the latest HUD development. We confirmed whether inter-vehicle distance varies depending on HUD display by monitoring a distance between driving vehicle and one in front when the vehicle is stopped. The result shows that HUD indication does not influence the inter-vehicle distance when stopping on the general road. Therefore, it can be concluded that the concern in the latest HUD does not hamper its advantage.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122304409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of molecular energy level of electron transport layer on recombination zone in OLED OLED中电子传递层分子能级对复合区的影响
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437409
Deepak kumar Dubey, R. Yadav, Ming-Kun Lee, Sophiya Khan, Tzu-Wei Liang, J. Jou
{"title":"Effect of molecular energy level of electron transport layer on recombination zone in OLED","authors":"Deepak kumar Dubey, R. Yadav, Ming-Kun Lee, Sophiya Khan, Tzu-Wei Liang, J. Jou","doi":"10.23919/AM-FPD.2018.8437409","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437409","url":null,"abstract":"Charge balance, high carrier density and high exciton recombination probability are crucial in achieving high device efficiency that can be done by aligning the bands at the interface between emitting and electron transporting layers (ETLs). We demonstrate here a comprehensive model with the aid of SETFOS to quantitatively investigate the effects of highest and lowest occupied molecular orbital (HOMO and LUMO) levels of the electron transport layer of the carrier accumulation and exciton generation in organic light emitting diodes. The simulation results show that the recombination in the emissive zone is highly influenced by energy levels of ETL and charge balance in the OLED can be controlled by tuning the HOMO and LUMO levels of ETL.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121106577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing 选择性准分子激光退火制备多晶硅薄膜及其晶体管的性能
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437391
T. Goto, K. Saito, Fuminobu Imaizumi, M. Hatanaka, M. Takimoto, M. Mizumura, J. Gotoh, Hirosi Ikenouc, K. Udagawa, J. Kido, S. Sugawa
{"title":"Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing","authors":"T. Goto, K. Saito, Fuminobu Imaizumi, M. Hatanaka, M. Takimoto, M. Mizumura, J. Gotoh, Hirosi Ikenouc, K. Udagawa, J. Kido, S. Sugawa","doi":"10.23919/AM-FPD.2018.8437391","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437391","url":null,"abstract":"Selective laser annealing system was developed, and applied to fabricate low temperature poly-Si thin film transistors. The new system performs the laser annealing only for the selective area of TFT region by adopting micro lens array, which can apply the laser annealing even for large substrate, contrary to the conventional excimer laser annealing system having the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this study, selectively-annealed poly-Si film structure and their TFT performance were investigated. Grain size increased as an increase in the laser energy density, and TFTs with the field effect mobility larger than 100 cm2V−1s−1 with the on-off ratio of drain current of 106 or more could be obtained.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116466185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability Enhancement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via a Low Temperature (180 °C) Solution Processed Passivation 通过低温(180°C)溶液钝化提高非晶In-Zn-O薄膜晶体管的可靠性
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437380
A. Syairah, J. Bermundo, Naofumi Yoshida, T. Nonaka, M. Fujii, Y. Ishikawa, Y. Uraoka
{"title":"Reliability Enhancement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via a Low Temperature (180 °C) Solution Processed Passivation","authors":"A. Syairah, J. Bermundo, Naofumi Yoshida, T. Nonaka, M. Fujii, Y. Ishikawa, Y. Uraoka","doi":"10.23919/AM-FPD.2018.8437380","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437380","url":null,"abstract":"The interaction between ambient environment or the adsorption-desorption of oxygen and water molecules at the back channel of bottom gate amorphous InZnO (a-IZO) thin-film transistors (TFTs) is one of the biggest issues that greatly affects the performance and reliability of TFTs. The issue can be overcome by depositing a passivation at the back channel as a protection barrier. This paper presents the performance of solution processed a-IZO TFTs incorporated with different types of Polysilsesquioxane (PSQ) passivation layers fabricated at low temperatures of 180 °C. A clear reliability enhancement is observed by using the low temperature PSQ which reduced the very high threshold voltage shift ($V_{th}$) of 16.0 V after positive bias stress (PBS) of unpassivated a-IZO TFT to a low $V_{th}$ of 3.1 V after passivation.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"455 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132108853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing 用于半导体退火快速加热系统的碳加热管
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437399
Tomoyoshi Miyazaki, Go Kobayashi, T. Sugawara, T. Kikuchi, M. Hasumi, T. Sameshima
{"title":"Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing","authors":"Tomoyoshi Miyazaki, Go Kobayashi, T. Sugawara, T. Kikuchi, M. Hasumi, T. Sameshima","doi":"10.23919/AM-FPD.2018.8437399","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437399","url":null,"abstract":"We report a new heating system with a carbon heating tube (CHT) which was made by a quartz tube filled with carbon particles and Ar gas. A 60-mm long and 4-mm diameter CHT was set in a cavity in which 2.45-GHz microwave was introduced. Via complete absorption of the input microwave power by carbon in the CHT during multi-reflection of microwave in the cavity, the CHT was effectively heated to 1279°C at a microwave power of 200 W for 33 s. Crystallization of a 50-nm-thick amorphous silicon thin film formed on glass substrate was demonstrated by mechanically moving the silicon sample just below the heated CHT. A high crystalline volume ratio of 0.9 was achieved.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132259708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of Perovskite Solar Cells with E-beam Evaporation TiO2Thin films: Considering Substrate Heater 电子束蒸发tio2薄膜制备钙钛矿太阳能电池:考虑衬底加热器
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437395
Md. Faruk Hossain, S. Naka, H. Okada
{"title":"Fabrication of Perovskite Solar Cells with E-beam Evaporation TiO2Thin films: Considering Substrate Heater","authors":"Md. Faruk Hossain, S. Naka, H. Okada","doi":"10.23919/AM-FPD.2018.8437395","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437395","url":null,"abstract":"The aim of this paper is to investigate the photovoltaic performance of perovskite solar cells (PeSCs) with E-beam evaporated TiO<inf>2</inf> films prepared on fluorine doped tin oxide (FTO) substrate at room temperature (RT, 25°C) and 160°C substrate temperature conditions. The effect of substrate temperature on the structural, optical, and surface morphological properties of E-beam evaporation (EBE) of TiO<inf>2</inf> films has been investigated in this work. The TiO<inf>2</inf> films prepared with 160°C has high crystallinity with more open upper-surface than the TiO<inf>2</inf> films at RT condition. The PeSC with TiO<inf>2</inf> prepared at 160°C has the maximum power conversion efficiency of 7.60%, which is higher than PeSCs with TiO<inf>2</inf> at RT. The photocurrent increases, the open-circuit voltage and fill factor decreases with the increase of substrate temperature.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterizations of Charge-Trap Memory Thin-Film Transistors Using HfO2/ZnO Stack-Structured Charge-Trap Layer Controlled by Atomic Layer Deposition 利用原子层沉积控制的HfO2/ZnO堆叠结构电荷阱层表征电荷阱存储薄膜晶体管
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437390
So-Yeong Na, Sung‐Min Yoon
{"title":"Characterizations of Charge-Trap Memory Thin-Film Transistors Using HfO2/ZnO Stack-Structured Charge-Trap Layer Controlled by Atomic Layer Deposition","authors":"So-Yeong Na, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2018.8437390","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437390","url":null,"abstract":"In this work, we fabricated IGZO-channel charge-trap-type memory thin-film transistors (CTM-TFTs) with HfO2/ZnO stack structured charge-trap layer (CTL) prepared by atomic-layer deposition (ALD) to investigate the effect of ALD cycle configuration controlled by the number and the thickness of inserted HfO21ayers between the ZnO. The CTM-TFTs using the CTL inserted by 4-nm-thick HfO2 showed good memory characteristics due to a high trap density, though the inserted 2-nm-thick HfO2 layer could not be effectively worked as CTL. As results, the memory window larger than 21 V as well as the program/erase speed faster than 500 μs were obtained for the CTM-TFTs by inserting two or fewer HfO2 layers with a thickness thicker than critical value into the ZnO thanks to high efficiency of charge-traps into the HfO2 thin films.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116284606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Display technologies for vehicle interior innovation 汽车内饰创新展示技术
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437403
M. Ihara
{"title":"Display technologies for vehicle interior innovation","authors":"M. Ihara","doi":"10.23919/AM-FPD.2018.8437403","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437403","url":null,"abstract":"The automotive display has moved from a “Follower” to a “Trend Setter” due to the unique requirements and opportunities in the automotive cockpit. To date, automotive displays have typically been manufactured from the core display technologies developed for the consumer electronics market. However, due to the growth of the automotive display market, the trend is now different. Today, there is a greater focus on technology development to meet the specific and unique demands of displays in the automotive interior. In this session, we would like to present the history and future development status of automotive displays.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130525607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stability Issue of Perovskite Solar Cells 钙钛矿太阳能电池的稳定性问题
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI: 10.23919/AM-FPD.2018.8437394
S. Ito
{"title":"Stability Issue of Perovskite Solar Cells","authors":"S. Ito","doi":"10.23919/AM-FPD.2018.8437394","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437394","url":null,"abstract":"This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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