Effect of molecular energy level of electron transport layer on recombination zone in OLED

Deepak kumar Dubey, R. Yadav, Ming-Kun Lee, Sophiya Khan, Tzu-Wei Liang, J. Jou
{"title":"Effect of molecular energy level of electron transport layer on recombination zone in OLED","authors":"Deepak kumar Dubey, R. Yadav, Ming-Kun Lee, Sophiya Khan, Tzu-Wei Liang, J. Jou","doi":"10.23919/AM-FPD.2018.8437409","DOIUrl":null,"url":null,"abstract":"Charge balance, high carrier density and high exciton recombination probability are crucial in achieving high device efficiency that can be done by aligning the bands at the interface between emitting and electron transporting layers (ETLs). We demonstrate here a comprehensive model with the aid of SETFOS to quantitatively investigate the effects of highest and lowest occupied molecular orbital (HOMO and LUMO) levels of the electron transport layer of the carrier accumulation and exciton generation in organic light emitting diodes. The simulation results show that the recombination in the emissive zone is highly influenced by energy levels of ETL and charge balance in the OLED can be controlled by tuning the HOMO and LUMO levels of ETL.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Charge balance, high carrier density and high exciton recombination probability are crucial in achieving high device efficiency that can be done by aligning the bands at the interface between emitting and electron transporting layers (ETLs). We demonstrate here a comprehensive model with the aid of SETFOS to quantitatively investigate the effects of highest and lowest occupied molecular orbital (HOMO and LUMO) levels of the electron transport layer of the carrier accumulation and exciton generation in organic light emitting diodes. The simulation results show that the recombination in the emissive zone is highly influenced by energy levels of ETL and charge balance in the OLED can be controlled by tuning the HOMO and LUMO levels of ETL.
OLED中电子传递层分子能级对复合区的影响
电荷平衡、高载流子密度和高激子重组概率是实现高器件效率的关键,这可以通过在发射层和电子传输层(etl)之间的界面上对齐能带来实现。本文利用SETFOS建立了一个综合模型,定量研究了有机发光二极管中载流子积累和激子产生的电子传递层最高和最低占据分子轨道(HOMO和LUMO)水平的影响。仿真结果表明,发光区的复合受ETL能级的影响较大,可以通过调节ETL的HOMO和LUMO能级来控制OLED中的电荷平衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信