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2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献

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Coaxial Nanocable Arrays: Si Sheathed With Diamond-like Carbon 同轴纳米阵列:硅包覆类金刚石碳
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609769
T. Qiu, X. Wu, P. Chu
{"title":"Coaxial Nanocable Arrays: Si Sheathed With Diamond-like Carbon","authors":"T. Qiu, X. Wu, P. Chu","doi":"10.1109/NANOEL.2006.1609769","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609769","url":null,"abstract":"Si nanowires as cores were prepared using electroless metal deposition, which can be understood on the basis of the self-assembled localized microscopic electrochemical cell model. To give direct experimental proof for the formation of Si nanowires sheathed with thin DLC films, we conducted TEM on the samples. The results show that the composite Si nanowire structure has a crystalline core and a surrounding amorphous layer. Room-temperature visible photoluminescence (PL) was also observed from the as-prepared composite nanostructures.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128172330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MISISFET: A Device with an Advanced Dielectric Structure MISISFET:一种具有先进介电结构的器件
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609761
A. Sarkar, T. K. Bhattacharyya
{"title":"MISISFET: A Device with an Advanced Dielectric Structure","authors":"A. Sarkar, T. K. Bhattacharyya","doi":"10.1109/NANOEL.2006.1609761","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609761","url":null,"abstract":"A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129505188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modeling of Carbon Nanotube Vertical Interconnects as Transmission Lines 碳纳米管垂直互连作为传输线的建模
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609692
C. Tan, J. Miao
{"title":"Modeling of Carbon Nanotube Vertical Interconnects as Transmission Lines","authors":"C. Tan, J. Miao","doi":"10.1109/NANOEL.2006.1609692","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609692","url":null,"abstract":"Metallic carbon nanotubes (CNTs) have received worldwide attention as potential substitutions for traditional vertical interconnect (via) materials due to their excellent inherent electrical and thermal properties. In this paper, we present a RLC transmission line model for a single single-walled CNT (SWCNT) via. The resistance of a CNT is dependent on both the magnitude of the applied bias voltage and its length. Due to the low-bias nature of via application, weak electron scattering (acoustic phonons) dominates and the electron mean free path can be as large as a few micrometers. For 1-D nanoelectronic systems, the kinetic (or quantum) inductance dominates the magnetic (or continuum) inductance. As the CNT via is designed to be shielded by a grounded ring, the electrostatic capacitance between the via and the ring is considered. Subsequently, this single SWCNT model is further developed to include a bundled SWCNT via as a result of the weak intertube coupling. Established theoretical modeling results and experimental findings conclude that only the outer tube of the multi-walled CNT (MWCNT) contributes to its conductance. From this, we infer that our modeling approach can also be used for predicting the performance of single and bundled MWCNT-based vias.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132775536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
ZnO nanoresistors by vapor phase transport method 气相输运法制备ZnO纳米电阻器
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609711
Yanhui Yang, X. W. Sun, B. Tay, C. Xu
{"title":"ZnO nanoresistors by vapor phase transport method","authors":"Yanhui Yang, X. W. Sun, B. Tay, C. Xu","doi":"10.1109/NANOEL.2006.1609711","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609711","url":null,"abstract":"Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[ 0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133451995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Inter-Poly High-κ Dielectrics for Next Generation Stacked-Gate Flash Memories Inter-Poly High-&#954的表征新一代叠层栅极闪存的电介质
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609772
Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou
{"title":"Characterization of Inter-Poly High-κ Dielectrics for Next Generation Stacked-Gate Flash Memories","authors":"Y. Chen, T. H. Li, K. Kin, C. Chien, J. Lou","doi":"10.1109/NANOEL.2006.1609772","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609772","url":null,"abstract":"In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133759656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of tungsten oxide nanowires using simple thermal heating 利用简单热加热生长氧化钨纳米线
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609752
G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva
{"title":"Growth of tungsten oxide nanowires using simple thermal heating","authors":"G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva","doi":"10.1109/NANOEL.2006.1609752","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609752","url":null,"abstract":"Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129830049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
AFM and MFM Study of Electrodeposited Ni Nanowires Grown Inside Pores of NCA Templates 电沉积镍纳米线在NCA模板孔内生长的AFM和MFM研究
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609741
I. Z. Rahman, K. Razeeb, M.A. Rahman
{"title":"AFM and MFM Study of Electrodeposited Ni Nanowires Grown Inside Pores of NCA Templates","authors":"I. Z. Rahman, K. Razeeb, M.A. Rahman","doi":"10.1109/NANOEL.2006.1609741","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609741","url":null,"abstract":"Nickel nanowires were grown by electrodeposition within Al2O3templates (NCA100 and NCA20) having average pore diameters of 240 and 200 nm. The growth of nanowires was investigated by Scanning Electron Microscopy (SEM). X-ray diffraction analysis shows polycrystalline nature of the nanowires having average crystallite size varying from 24 to 35 nm. Average crystallite size and the crystal orientation were dependent on the pH and temperature of the electrolyte. Bulk magnetic properties of nickel filled nanoporous arrays were investigated using the Vibrating sample magnetometer (VSM). Coercivity as high as 19.42 kA m-1was obtained from 12.5μm length nanowires deposited inside NCA20. Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) were employed to investigate the topography and magnetic domain structures on top of these nanowires when they reside inside the templates.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126452966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cubic SiC Nano-thin Films and Nano-wires: High Vacuum MOCVD, Surface Characterization, and Application Tests 立方碳化硅纳米薄膜和纳米线:高真空MOCVD，表面表征和应用测试
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609762
J. Hyun, B. Kang, J. Park, S. Nam, J. Boo
{"title":"Cubic SiC Nano-thin Films and Nano-wires: High Vacuum MOCVD, Surface Characterization, and Application Tests","authors":"J. Hyun, B. Kang, J. Park, S. Nam, J. Boo","doi":"10.1109/NANOEL.2006.1609762","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609762","url":null,"abstract":"Singlecrystalline, epitaxial cubic silicon carbide (β-SiC) nano-thin films have been deposited on Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127449419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Transmission and Current Distribution of C60Molecule Bridge with Near-, Far-terminal Electrodes 近、远端c60分子桥的量子传输和电流分布
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609709
L. Wang, D.W. Yu, Y. Li, K. Wong
{"title":"Quantum Transmission and Current Distribution of C60Molecule Bridge with Near-, Far-terminal Electrodes","authors":"L. Wang, D.W. Yu, Y. Li, K. Wong","doi":"10.1109/NANOEL.2006.1609709","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609709","url":null,"abstract":"The quantum transmission characteristic of a C60molecular bridge with near- and far-terminal electrodes is investigated theoretically by using Green's function approach based on tight-binding theory, in which only one π orbital is considered per carbon atom inside a C60molecule. The transmission spectra for electrons through the C60molecular bridge from an input terminal to two output terminals have been obtained. The quantum current distributions inside the molecular bridge are calculated by the current density method based on the Fisher-Lee formula at the energy points E=-1.36eV and +1.59eV, respectively, where the transmission probabilities appear as peaks. We found that the transmission spectra are related to the incident electronic energy and depend on C60molecular levels strongly. We also found that the multi-point switching properties of C60molecular bridge depend on the energy of the electrons transmitted through the C60molecule. Agreement of the quantum current distributions in the C60molecular bridge with Kirchhoff quantum current momentum conservation law is explained.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121634520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Engineering in Nanoscale Semiconductors through Surface Chemistry 基于表面化学的纳米半导体缺陷工程
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609725
E. Seebauer
{"title":"Defect Engineering in Nanoscale Semiconductors through Surface Chemistry","authors":"E. Seebauer","doi":"10.1109/NANOEL.2006.1609725","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609725","url":null,"abstract":"In the same way that gases react with surfaces from above, bulk point defects such as interstitial atoms and vacancies can react from below. Little attention has been paid to this form of surface chemistry, although it is very important for nanoscale semiconductor devices where all regions are in close proximity to a surface or interface. Recent solid-state diffusion measurements and modeling in our laboratory have shown that reactions between defects and semiconductor surfaces can play the dominant role in regulating defect concentrations. Furthermore, the rates of these reactions can be controlled through submonolayer gas adsorption. There are two separate mechanisms for using the surface to control bulk defect concentrations. The first mechanism involves reflecting charged defects from the surface due to electrically active surface defects that set up a repulsive electric field. The second mechanism involves the exchange of defects with surface dangling bonds. Taken together, these observations point to entirely new possibilities for controlling and manipulating defects in semiconductor nanostructure fabrication.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126019801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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