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2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献

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Quantum Transmission and Current Distribution of C60Molecule Bridge with Near-, Far-terminal Electrodes 近、远端c60分子桥的量子传输和电流分布
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609709
L. Wang, D.W. Yu, Y. Li, K. Wong
{"title":"Quantum Transmission and Current Distribution of C60Molecule Bridge with Near-, Far-terminal Electrodes","authors":"L. Wang, D.W. Yu, Y. Li, K. Wong","doi":"10.1109/NANOEL.2006.1609709","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609709","url":null,"abstract":"The quantum transmission characteristic of a C60molecular bridge with near- and far-terminal electrodes is investigated theoretically by using Green's function approach based on tight-binding theory, in which only one π orbital is considered per carbon atom inside a C60molecule. The transmission spectra for electrons through the C60molecular bridge from an input terminal to two output terminals have been obtained. The quantum current distributions inside the molecular bridge are calculated by the current density method based on the Fisher-Lee formula at the energy points E=-1.36eV and +1.59eV, respectively, where the transmission probabilities appear as peaks. We found that the transmission spectra are related to the incident electronic energy and depend on C60molecular levels strongly. We also found that the multi-point switching properties of C60molecular bridge depend on the energy of the electrons transmitted through the C60molecule. Agreement of the quantum current distributions in the C60molecular bridge with Kirchhoff quantum current momentum conservation law is explained.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121634520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AFM and MFM Study of Electrodeposited Ni Nanowires Grown Inside Pores of NCA Templates 电沉积镍纳米线在NCA模板孔内生长的AFM和MFM研究
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609741
I. Z. Rahman, K. Razeeb, M.A. Rahman
{"title":"AFM and MFM Study of Electrodeposited Ni Nanowires Grown Inside Pores of NCA Templates","authors":"I. Z. Rahman, K. Razeeb, M.A. Rahman","doi":"10.1109/NANOEL.2006.1609741","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609741","url":null,"abstract":"Nickel nanowires were grown by electrodeposition within Al2O3templates (NCA100 and NCA20) having average pore diameters of 240 and 200 nm. The growth of nanowires was investigated by Scanning Electron Microscopy (SEM). X-ray diffraction analysis shows polycrystalline nature of the nanowires having average crystallite size varying from 24 to 35 nm. Average crystallite size and the crystal orientation were dependent on the pH and temperature of the electrolyte. Bulk magnetic properties of nickel filled nanoporous arrays were investigated using the Vibrating sample magnetometer (VSM). Coercivity as high as 19.42 kA m-1was obtained from 12.5μm length nanowires deposited inside NCA20. Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) were employed to investigate the topography and magnetic domain structures on top of these nanowires when they reside inside the templates.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126452966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of ZnO ribbon/comb structures ZnO带状/梳状结构的光学性质
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609750
Y. Leung, A. B. Djuriši, W. Kwok, D. Phillips, W. K. Chan, H. Chen, S. Gwo
{"title":"Optical properties of ZnO ribbon/comb structures","authors":"Y. Leung, A. B. Djuriši, W. Kwok, D. Phillips, W. K. Chan, H. Chen, S. Gwo","doi":"10.1109/NANOEL.2006.1609750","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609750","url":null,"abstract":"In this paper, we report the study of the optical properties of ZnO ribbon/comb nanostructures. The nanostructures were synthesized using a previously reported procedure, and they were characterized by scanning electron microscopy (SEM). The optical properties of ribbon/comb structures were studied using variable temperature photoluminescence with a HeCd laser excitation source (325 nm). Time-resolved photoluminescence (TRPL) was measured by using the Kerr gated fluorescence technique.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128195322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Synthesis of ZnO Nanocrystals 氧化锌纳米晶的化学合成
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609701
Y. Wu, A. Tok, F. Boey, X. Zeng, X. Zhang
{"title":"Chemical Synthesis of ZnO Nanocrystals","authors":"Y. Wu, A. Tok, F. Boey, X. Zeng, X. Zhang","doi":"10.1109/NANOEL.2006.1609701","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609701","url":null,"abstract":"Nano-crystalline ZnO particles were synthesized using alcoholic solutions of zinc acetate dihydrate through a colloidal process. Five types of capping agents: 3-aminopropyl trimethoxysilane (Am), tetraethyl orthosilicate (TEOS), mercaptosuccinic acid (Ms), 3-mercaptopropyl trimethoxysilane (Mp) and polyvinylpyrrolidone (Pv) were added at the first ZnO precipitation time (1stPPT) to limit the particle growth. The first three capping agents effectively capped the ZnO nanoparticles and limited the growth of the particles, while the last two capping agents caused agglomeration or larger clusters in the solutions. Particles synthesized were in the size range of 10nm to 30nm after capping, and grew to 60nm and 100nm in 3 weeks and 6 weeks respectively during storage at ambient conditions. Refluxing time was found to only affect the 1stPPT time. Washing by methanol and water and slow drying are very important in converting Zn(OH)2into ZnO. XRD analyses revealed that single crystal ZnO nanoparticles were achieved with crystal size 53-55nm. Photoluminescence (PL) spectra showed high intensity in UV emission and very low intensity in the visible emission, which indicates a good surface morphology of the ZnO nanoparticles with little surface defect. Optical absorption spectra showed absorption at wavelength of 380nm from the uncapped ZnO, corresponding to the band-gap of bulk ZnO. While capped ZnO absorbed at shorter wavelength (350nm) indicating a much smaller particle size.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126155731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Gain and Related Characteristics of Self-Assembled Quantum Dash Structures 自组装量子冲刺结构的增益及相关特性
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609746
K. Chan, J.H. Wei
{"title":"The Gain and Related Characteristics of Self-Assembled Quantum Dash Structures","authors":"K. Chan, J.H. Wei","doi":"10.1109/NANOEL.2006.1609746","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609746","url":null,"abstract":"The effects of size fluctuation on the gain and related characteristics of quantum dash structures are analysed theoretically. Detailed comparison with quantum well structures and performance optimization by blue-shifting the emission energy are carried out.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129205868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Position and Size-Controlled Photosynthesis of Silicon Nanocrystals in SiO2Films 二氧化硅薄膜中硅纳米晶体位置和尺寸控制的光合作用
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609731
C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki
{"title":"Position and Size-Controlled Photosynthesis of Silicon Nanocrystals in SiO2Films","authors":"C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki","doi":"10.1109/NANOEL.2006.1609731","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609731","url":null,"abstract":"The SiOxthin film made of the SiOxnanoparticles (~40, gm) shows a strong reaction to laser irradiation. The photosynthesis of silicon (Si) nanocrystals (NC's) is found to be self-limited to the laser power and exposure time. Furthermore, the laser irradiation of the SiOxfilm not only produces Si NC's, also transforms the SiOxfilm from the powder-like to the continuous. The photosynthesis of Si NC's has several advantages such as low-temperature process and good control in the size and positioning over the conventional synthesis methods and has many potential applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131694208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In situ AFM Study of the Electropolymerization of Polypyrrole/Gold Nanocomposite 聚吡咯/金纳米复合材料电聚合的原位AFM研究
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609759
Qin Zhou, Changming Li
{"title":"In situ AFM Study of the Electropolymerization of Polypyrrole/Gold Nanocomposite","authors":"Qin Zhou, Changming Li","doi":"10.1109/NANOEL.2006.1609759","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609759","url":null,"abstract":"In this work, an electrochemical cell was designed and fabricated for in situ AFM study of the electropolymerization process of PPY in the presence of gold nanoparticles. PPY/Au nanocomposite was one step-synthesized simply by the potentiostatic deposition at constant potential. Based on the results of the current-time transient (I-t) measurements and in situ AFM measurements, it was found that the nucleation and growth of PPY/Au nanocomposite was an instantaneous three-dimension progress after nuclei overlapping. Regarding the process before nuclei overlapping, compared with that of pure PPY, it departed from the instantaneous three-dimension progress because of the presence of gold nanoparticles.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"490-495 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130549218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal Conductivity of Nanoparticle Suspensions (Nanofluids) 纳米颗粒悬浮液(纳米流体)的导热性
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609703
S. Murshed, K. Leong, C. Yang
{"title":"Thermal Conductivity of Nanoparticle Suspensions (Nanofluids)","authors":"S. Murshed, K. Leong, C. Yang","doi":"10.1109/NANOEL.2006.1609703","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609703","url":null,"abstract":"This paper presents theoretical and experimental investigations on the enhanced thermal conductivity of nanofluids. The thermal conductivity of nanofluids is found to significantly increase with particle volume fraction. Taking into account the effects of the interfacial layer and particle size, two models (one for spherical nanoparticles and the other for cylindrical nanoparticles in base fluids) are developed to predict the effective thermal conductivity of nanofluids. The proposed models show good agreement with the experimental results and give better predictions of the effective thermal conductivity of nanofluids compared to existing models in the literature.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134279652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
A Nano-MOS Array: Metallic Carbon Nanostructure Connected with Nanoscale SiO2Islands inside Insulated Alumina Nanochannels on Silicon Substrate 纳米mos阵列:金属碳纳米结构与硅衬底上绝缘氧化铝纳米通道内的纳米sio2岛连接
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609760
Y. Mei, G. Siu, R. Fu, P. Chu, J. Zhai, Y.J. Wang, O. Tsui, Z. Tang, J.J. Shi, M. Kong
{"title":"A Nano-MOS Array: Metallic Carbon Nanostructure Connected with Nanoscale SiO2Islands inside Insulated Alumina Nanochannels on Silicon Substrate","authors":"Y. Mei, G. Siu, R. Fu, P. Chu, J. Zhai, Y.J. Wang, O. Tsui, Z. Tang, J.J. Shi, M. Kong","doi":"10.1109/NANOEL.2006.1609760","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609760","url":null,"abstract":"A nano-MOS array consisting of metallic carbon nanostructures connected with nanoscale SiO2islands inside insulated alumina nanochannel on silicon substrate was fabricated via Si-based porous anodic alumina (PAA) template. The electrical properties of the nano-MOS array were studied by means of current-voltage (I-V) and frequency dependent capacitance-voltage (C-V) tests. This structure is important to the application of carbon nanostructures and PAA template and has high potential in future nanoelectronics applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115687971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transport Characteristics of Si Nanowires in Bulk Silicon and SOI Wafers 硅纳米线在大块硅和SOI晶圆中的输运特性
2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609690
A. Agarwal, N. Singh, T. Liow, R. Kumar, N. Balasubramanian, D. Kwong
{"title":"Transport Characteristics of Si Nanowires in Bulk Silicon and SOI Wafers","authors":"A. Agarwal, N. Singh, T. Liow, R. Kumar, N. Balasubramanian, D. Kwong","doi":"10.1109/NANOEL.2006.1609690","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609690","url":null,"abstract":"Silicon nanowires (SiNW) were fabricated on bulk Silicon and SOI wafers by means of conventional Si process technology. The nanowires were formed by stress-limited oxidation of Si beams pre-patterned on the wafer. Single or double vertically self-aligned wires were obtained depending on the bulk or SOI wafer used and also on the depth of silicon beam etched. The resulting nanowires exhibit triangular cross-section that can be converted to circular shape by annealing at high temperatures, exploiting the visco-elastic properties of SiO2and Si. Electrical measurements on single nanowire show that the resistance scales with length demonstrating consistent cross-sectional dimension in wires of different length. The nanowires formed on SOI wafers were also characterized as channels in FET configuration, using substrate as gate electrode. This technique can be exploited for realizing several nano-electronics, NEMS and biosensor applications in bulk silicon or SOI wafers, all in a CMOS compatible manner.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115744684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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