利用简单热加热生长氧化钨纳米线

G.Y. Chen, V. Stolojan, D. Cox, C. Giusca, S. Silva
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引用次数: 6

摘要

氧化钨纳米线在乙炔和氮气混合物中加热,直接生长在钨丝和钨板上。通过在氮气环境中加热钨,可以通过自组装机制合成单晶氧化钨纳米线。研究发现,与在氧化环境中合成的纳米线相比,加入乙炔可以显著提高产率,这也导致了更细的纳米线。氧化钨纳米线的直径为5至15纳米,长度为数百纳米。在某些情况下,使用乙炔和氮气工艺气体会导致氧化钨纳米线样品在视觉上看起来透明。比较了乙炔/氮气或空气/氮气混合物的生长情况。在考虑烃类加成效应的情况下,提出了一种可能的合成机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of tungsten oxide nanowires using simple thermal heating
Tungsten oxide nanowires are grown directly on tungsten wires and plates using thermal heating in an acetylene and nitrogen mixture. By heating the tungsten in nitrogen ambient, single crystal tungsten oxide nanowires can be synthesized via a self-assembly mechanism. It was found that the yield can be significantly increased with the addition of acetylene, which also results in thinner nanowires, as compared to nanowires synthesized in an oxidizing ambient. The tungsten oxide nanowires are 5 to 15nm in diameter and hundreds of nanometers in length. In some cases, the use of acetylene and nitrogen process gas would result in tungsten oxide nanowires samples that appear visually transparent. Comparison of the growth using the acetylene/nitrogen or then air/nitrogen mixtures is carried out. A possible synthesis mechanism, taking into account the effect of hydrocarbon addition is proposed.
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