MISISFET:一种具有先进介电结构的器件

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI:10.1109/NANOEL.2006.1609761

A. Sarkar, T. K. Bhattacharyya

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引用次数: 6

摘要

本文描述了一种用“介电堆”代替MOSFET单绝缘体的新型器件(MISISFET)。该器件利用谐振隧道二极管(RTD)的工作原理，有效地抑制了栅漏电流。该装置能够阻止应力引起的故障。该器件可以利用材料形成硅兼容rtd来实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MISISFET: A Device with an Advanced Dielectric Structure

A novel device (MISISFET) with a ‘dielectric stack’ instead of the single insulator of MOSFET has been described in this paper. The device suppresses the gate leakage current considerably by utilizing the principle of operation of resonant tunneling diodes(RTD). The device is capable of arresting stress induced breakdowns. The device can be realized by utilizing materials forming Silicon compatible RTDs.

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2006 IEEE Conference on Emerging Technologies - Nanoelectronics

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