Superlattices and Microstructures最新文献_第9页

Analytical modeling of subband quantization and quantum transport in very Low-dimensional dual metal double gate TFET 极低维双金属双栅TFET中子带量子化和量子输运的分析建模

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107063

Sharmistha Shee Kanrar, Subir Kumar Sarkar

{"title":"Analytical modeling of subband quantization and quantum transport in very Low-dimensional dual metal double gate TFET","authors":"Sharmistha Shee Kanrar, Subir Kumar Sarkar","doi":"10.1016/j.spmi.2021.107063","DOIUrl":"10.1016/j.spmi.2021.107063","url":null,"abstract":"<div>We present a novel and comprehensive quantum analytical modeling of a sub-20 nm Dual Metal Double Gate (DMDG) Tunnel Field Effect Transistor (TFET) for the first time in literature. Owing to structural confinement at sub-20 nm regime, the energy states at channel are quantized and carrier propagation is regulated by quantum transport. We address such quantization aspects (viz. subband quantization, bandgap shifting, tunneling through barrier etc.) and incorporate them in analytical modeling using self-consistent solution of Schrödinger-Poisson's equation. As a result of work function difference at gate, we observe creation of quantum well, followed by a tunneling barrier, along the channel. Energy states in the quantum well are derived from Schrodinger equation, whereas, transmission coefficients are derived for each tunneling barrier. Finally, current density is obtained using ‘Landauer formula for quantum transport’. We methodically study the effects of structural confinement on device performances and observe significant shift from classical counterpart. Moreover, we note that quantization in DMDG TFET can be optimized that will lead to superior device performance. The results are verified with simulation data in each occasion to substantiate analytical models.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47107863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

On the role of crystal defects on the lattice thermal conductivity of monolayer WSe2 (P63/mmc) thermoelectric materials by DFT calculation 用DFT计算晶体缺陷对单层WSe2 (P63/mmc)热电材料晶格导热系数的影响

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107057

Yingtao Wang, Xian Zhang

{"title":"On the role of crystal defects on the lattice thermal conductivity of monolayer WSe2 (P63/mmc) thermoelectric materials by DFT calculation","authors":"Yingtao Wang, Xian Zhang","doi":"10.1016/j.spmi.2021.107057","DOIUrl":"10.1016/j.spmi.2021.107057","url":null,"abstract":"<div>As the energy problem becomes more prominent, research on thermoelectric (TE) materials has deepened over the past few decades. Low thermal conductivity enables thermoelectric materials better thermal conversion performance. In this study, based on the first principles and phonon Boltzmann transport equation, we studied the thermal conductivities of single-layer WSe2 under several defect conditions using density functional theory (DFT) as implemented in the Vienna Ab-initio Simulation Package (VASP). The lattice thermal conductivities of WSe2 under six kinds of defect states, i.e., PS, SS-c, DS-s, SW-c, SS-e, and DS-d, are 66.1, 41.2, 39.4, 8.8, 42.1, and 38.4 W/(m·K), respectively at 300 K. Defect structures can reduce thermal conductivity up to 86.7% (SW-c) compared with perfect structure. The influences of defect content, type, location factors on thermal properties have been discussed in this research. By introducing atom defects, we can reduce and regulate the thermal property of WSe2, which should provide an interesting idea for other thermoelectric materials to gain a lower thermal conductivity.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45072301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

3-D analytical model of the high-voltage interconnection effect for SOI LDMOS SOI LDMOS高压互连效应的三维解析模型

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107056

Ling Du , Yu-Feng Guo , Jun Zhang , Jia-Fei Yao , Jian-Hua Liu , Chen-Yang Huang , Man Li

{"title":"3-D analytical model of the high-voltage interconnection effect for SOI LDMOS","authors":"Ling Du , Yu-Feng Guo , Jun Zhang , Jia-Fei Yao , Jian-Hua Liu , Chen-Yang Huang , Man Li","doi":"10.1016/j.spmi.2021.107056","DOIUrl":"10.1016/j.spmi.2021.107056","url":null,"abstract":"<div>The high-voltage interconnection (HVI) effect induces electric field crowding at the drift region near the source side of power lateral double diffusion MOS (LDMOS). Thus, the electric field profile is deteriorated, and the breakdown characteristic is weakened. This increases the difficulty of device optimization and affects the reliability of the device significantly. Since conventional models based 2-D method can only treat the HVI as a metal layer, therefore, no quantitative analysis can be provided. In order to quantify the impact of the HVI and provide a design scheme for preventing the deterioration in the device's breakdown characteristic, a novel three-dimensional analytical model of the HVI effect for the SOI LDMOS is proposed. By solving the 3-D Poisson's equation, the potential and electric field distribution of the drift region surface are investigated, and the breakdown mechanism is explored quantitatively. The analytical solutions are matched well with the simulation results, which verify the validity of the model. Based on the model, a simple and effective criterion is derived to optimize the structure geometry parameters. The largest width of the HVI metal line is given to prevent the breakdown voltage deterioration.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46774992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical amplification by surface-plasmon-resonant Au grating substrates: Monolayer MoS2 with 170-fold second harmonic generation and 3-fold (off-resonance) Raman scattering 表面等离子体谐振金光栅基底的光学放大:具有170倍二次谐波产生和3倍(非共振)拉曼散射的单层MoS2

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107077

Joonas T. Holmi , Ramesh Raju , Jonas Ylönen , Nagarajan Subramaniyam , Harri Lipsanen

{"title":"Optical amplification by surface-plasmon-resonant Au grating substrates: Monolayer MoS2 with 170-fold second harmonic generation and 3-fold (off-resonance) Raman scattering","authors":"Joonas T. Holmi , Ramesh Raju , Jonas Ylönen , Nagarajan Subramaniyam , Harri Lipsanen","doi":"10.1016/j.spmi.2021.107077","DOIUrl":"10.1016/j.spmi.2021.107077","url":null,"abstract":"<div>Nanoplasmonics is a potential game-changer in the development of next-generation on-chip photonic devices and computers, owing to the geometrically controlled and amplified linear and nonlinear optical processes. For instance, it resolves the limited light-matter interaction of the unique two-dimensional (2D) crystalline materials like semiconducting monolayer molybdenum disulfide (1L-MoS2). Metal grating (MG) substrates excel at this because their surface plasmons (SPs) can lead to stark field confinement near the surface. This work studies optical amplification of 1L-MoS2 on the gold (Au) MG substrate, which was designed to operate in a glycerol environment with SP resonance (SPR) at 850 nm excitation wavelength. Its design was verified by simulated and experimental reflectances, and topographically inspected by atomic force microscopy (AFM). Two advanced imaging modalities, second harmonic generation (SHG) and confocal Raman microscopy (CRM) were used to evaluate its 170-fold SHG on- and 3-fold CRM off-resonance optical amplifications, respectively. Some MoS2-to-grating adhesion issues due to trapped liquid showed as image nonuniformities. Possible improvements to limitations like surface roughness were also discussed. These Au MG substrates can boost conventional linear and nonlinear backscattering microscopies because they are tunable in the visible and near-infrared range by selecting geometry, metal, and environment.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0749603621002755/pdfft?md5=c907b8f1b8a02c97f57b933d5fc2ba15&pid=1-s2.0-S0749603621002755-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46988402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

The impact of precursor thickness and surface roughness on the power factor of Cu2ZnSnS4 (CZTS) at near room temperature: Spin-coating deposition 前驱体厚度和表面粗糙度对近室温Cu2ZnSnS4 (CZTS)功率因数的影响:旋涂沉积

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107091

Hassan Ahmoum , Guojian Li , Mohd Sukor Su'ait , Mourad Boughrara , Puvaneswaran Chelvanathan , Yassine Khaaissa , Mohamed Kerouad , Qiang Wang

{"title":"The impact of precursor thickness and surface roughness on the power factor of Cu2ZnSnS4 (CZTS) at near room temperature: Spin-coating deposition","authors":"Hassan Ahmoum , Guojian Li , Mohd Sukor Su'ait , Mourad Boughrara , Puvaneswaran Chelvanathan , Yassine Khaaissa , Mohamed Kerouad , Qiang Wang","doi":"10.1016/j.spmi.2021.107091","DOIUrl":"10.1016/j.spmi.2021.107091","url":null,"abstract":"<div>This work investigated the thermoelectric properties of Cu2ZnSnS4 (CZTS) thin films deposited on the soda-lime glass using spin-coating techniques with different layers. X-ray diffraction (XRD) pattern confirms the increase of the layer number leads to improve the crystallite size and all the films exhibit tetragonal structure with the presence of secondary phases. EDX shows a reduction of Cu and Zn contents while an increase in Sn contents is observed when the thickness increases. Surface topography is also carried out to study the surface roughness and it is found to be minimum when we deposit 4 layers. The absorption spectra show that CZTS exhibit a bandgap varied between 1.33 and 1.9 eV, the resistivity and the Seebeck coefficient have been found to increase with the increase of surface roughness. This investigation indicates that Cu2ZnSnS4 thin films can be a suitable material for thermoelectric application at near room temperature range.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43277010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study 利用蜻蜓算法优化be掺杂Al0.29Ga0.71As肖特基二极管参数的识别:热效应研究

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107085

Walid Filali , Rachid Amrani , Elyes Garoudja , Slimane Oussalah , Fouaz Lekoui , Zineb Oukerimi , Nouredine Sengouga , Mohamed Henini

{"title":"Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study","authors":"Walid Filali , Rachid Amrani , Elyes Garoudja , Slimane Oussalah , Fouaz Lekoui , Zineb Oukerimi , Nouredine Sengouga , Mohamed Henini","doi":"10.1016/j.spmi.2021.107085","DOIUrl":"10.1016/j.spmi.2021.107085","url":null,"abstract":"<div>In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al0.29Ga0.71As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density <math><mrow><mo>(</mo><msub><mi>N</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>)</mo></mrow></math> as function of the difference between the surface state energy and valence band energy <math><mrow><mo>(</mo><msub><mi>E</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>−</mo><msub><mi>E</mi><mi>V</mi></msub><mo>)</mo></mrow></math> was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49472637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization AlGaN/GaN HEMT在pH传感中的应用及灵敏度优化研究

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107067

Aasif Mohammad Bhat, Nawaz shafi, C. Periasamy

引用次数: 7

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates 使用In0.12Ga0.88N放松模板将LED发射从蓝色到绿色间隙光谱范围

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107065

Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair

{"title":"Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates","authors":"Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair","doi":"10.1016/j.spmi.2021.107065","DOIUrl":"10.1016/j.spmi.2021.107065","url":null,"abstract":"<div>InyGa1-yN templates are grown with y ≤ 13.5% and a few nm surface roughness. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed InyGa1-yN templates with y of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of y, in addressing problems facing long wavelength InGaN LEDs.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45033322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications 双通道技术在AlGaN/GaN HEMT中对未来生物传感应用的适用性

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107086

L. Arivazhagan , D. Nirmal , Anwar Jarndal , Hasina F. Huq , Subhash Chander , S. Bhagyalakshmi , Pavan Kumar Reddy , J. Ajayan , Arathy Varghese

{"title":"Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications","authors":"L. Arivazhagan , D. Nirmal , Anwar Jarndal , Hasina F. Huq , Subhash Chander , S. Bhagyalakshmi , Pavan Kumar Reddy , J. Ajayan , Arathy Varghese","doi":"10.1016/j.spmi.2021.107086","DOIUrl":"10.1016/j.spmi.2021.107086","url":null,"abstract":"<div>Sensing COVID-19, GOx (glucose oxidase enzyme) in exhaled breath condensate/saliva, bio-molecules like KIM (Kidney Injury Molecule) in human body and pH value in human body fluids have gained huge attention in the present scenario as well as in the past decade. Hence, for the first time, double channel technique in AlGaN/GaN High Electron Mobility Transistor (HEMT) is proposed and its applicability is demonstrated by biosensing application. Simulation using SILVACO Technology Computer Aided Design (TCAD) based on numerical solid state models has been extensively used for investigation and analysis. The sensitivity of double channel device is compared with single channel device and its performance is evaluated in terms of the transconductance. Unlike the single channel device, double channel device exhibited wide range of transconductance with respect to gate bias. The device recorded a sensitivity of 136%, which is 74% higher than the sensitivity of single channel device. Hence, it is inferred that the sensitivity enhances with the use of multiple channels and could be increased by increasing the number of channels. The results of this research show that the proposed sensor stands a promising candidate for future biosensing applications that demand high detection limits.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45355592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Tunable electronic structure and magnetic characteristics of two-dimensional graphyne/VI3 van der Waals heterostructures 二维石墨炔/VI3范德华异质结构的可调谐电子结构和磁性

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107081

Nan Sun, Baozeng Zhou, Xiaocha Wang

{"title":"Tunable electronic structure and magnetic characteristics of two-dimensional graphyne/VI3 van der Waals heterostructures","authors":"Nan Sun, Baozeng Zhou, Xiaocha Wang","doi":"10.1016/j.spmi.2021.107081","DOIUrl":"10.1016/j.spmi.2021.107081","url":null,"abstract":"<div>Due to the excellent properties of two-dimensional (2D) magnetic materials, 2D van der Waals magnetic heterostructures have obtained more research in nanoelectronics. In this work, the electronic and magnetic properties in 2D graphyne/VI3 (γ-GY/VI3) magnetic heterostructures have been elaborately examined on account of first-principles calculations. As shown by the research results, semiconductor or half-metallic characteristic of VI3 monolayer in γ-GY/VI3 heterostructures may be exhibited due to the difference in stacking pattern. Furthermore, the formation of heterostructures significantly enhances the perpendicular magnetic anisotropy (PMA) of VI3 monolayer. At compressive strains, VI3 monolayer of γ-GY/VI3 heterostructure realizes a shift from semiconductor to metal characteristic, and this significantly enhances the electrical conductivity of VI3 monolayer. Moreover, through shortening the interlayer distance in γ-GY/VI3 heterostructures, the spin-up half-metallic state appears in VI3 monolayer. Both compressive strains and interlayer distance can also enhance the interlayer interaction, charge transfer and PMA of γ-GY/VI3 heterostructure. These tunable electronic properties show that γ-GY/VI3 heterostructures can become potential alternatives applicable to nanoelectronic and spintronic device design.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45370748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4