Superlattices and Microstructures最新文献_第10页

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures 不同温度下生长InGaN阱层的InGaN/GaN MQW led的发射特性

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107090

Rui Li , Mingsheng Xu , Chengxin Wang , Shangda Qu , Kaiju Shi , Changfu Li , Xiangang Xu , Ziwu Ji

{"title":"Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures","authors":"Rui Li , Mingsheng Xu , Chengxin Wang , Shangda Qu , Kaiju Shi , Changfu Li , Xiangang Xu , Ziwu Ji","doi":"10.1016/j.spmi.2021.107090","DOIUrl":"10.1016/j.spmi.2021.107090","url":null,"abstract":"<div>Two light-emitting diodes (LEDs) enabled by InGaN/GaN multiple quantum wells (MQWs) with different well layer growth temperatures (WLGTs) were prepared. The dependences of electroluminescence (EL) spectra of these two structures on temperature at various fixed injection currents indicate that, a decreasing WLGT can result in a conversion of the well layer structure from a one-zone structure with better homogeneity in the localization depth into a two-zone structure with different average In contents and different localization depths, due to the increased In content-induced enhanced component fluctuation. The former is inferred from an “inverted-V-shaped” (increasing-decreasing) temperature-dependent behavior of peak energy at all fixed currents; the latter is mainly inferred from an “M-shaped” (increasing-decreasing-increasing-decreasing) temperature-dependent behavior of peak energy at intermediate fixed currents. These explanations also match those given for temperature-dependent behaviors in terms of external quantum efficiency (EQE) of these two LEDs, including “M-shaped” temperature-dependent behaviors of the EQE of LED B at the intermediate fixed currents.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45990442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process 基于机械剥离工艺的柔性β-Ga2O3肖特基势垒二极管特性

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107078

Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao

{"title":"Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process","authors":"Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao","doi":"10.1016/j.spmi.2021.107078","DOIUrl":"10.1016/j.spmi.2021.107078","url":null,"abstract":"<div>The flexible transverse β-Ga2O3 Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga2O3 single crystal film onto muscovite, and its electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0–1 V and decreases in the large voltage range of 1–4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (gm) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of gm drifts to the right. In addition, the switch ratio of the device under flat conditions is 108, whereas in bending tests the switch ratio is 107 which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43499411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes Ni/SiO2/p-Si/Al二极管反向电流-电压特性的非饱和行为研究

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107088

Naveen Kumar, Subhash Chand

{"title":"Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes","authors":"Naveen Kumar, Subhash Chand","doi":"10.1016/j.spmi.2021.107088","DOIUrl":"10.1016/j.spmi.2021.107088","url":null,"abstract":"<div>The present work is an endeavour to investigate non‒saturation behaviour of reverse current in Ni/SiO2/p-Si/Al over a wide low temperature range of 70–300 K at step of 10 K using well accepted models i.e., Poole-Frenkel emission, Schottky emission and Fowler‒Nordheim tunneling mechanisms. The results of the study revealed that Schottky emission has the dominance over Poole-Frenkel emission in the temperature range of 200–300 K with the trap state activation energy of 0.17 eV. In the remaining temperature range trap assisted tunnelling and involvement of other mechanisms were suggested. Further, the Fowler‒Nordheim tunneling mechanism was found to be effective above reverse bias of 0.5 V over the entire temperature range of 70–300 K. Thus, variation of barrier height with temperature was examined using Fowler‒Nordheim tunneling model and it was found to increase from 0.17 eV to 0.28 eV as temperature varied from 300 to 70 K. The increase in barrier height with decrease in temperature corroborates the decrease in reverse current with temperature.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42715819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Lattice Boltzmann simulation of fluid flow and heat transfer in a micro channel with heat sources located on the walls 热源位于壁面的微通道内流体流动和传热的晶格玻尔兹曼模拟

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107069

Kourosh Javaherdeh , Habib Karimi , Touraj Azarbarzin

{"title":"Lattice Boltzmann simulation of fluid flow and heat transfer in a micro channel with heat sources located on the walls","authors":"Kourosh Javaherdeh , Habib Karimi , Touraj Azarbarzin","doi":"10.1016/j.spmi.2021.107069","DOIUrl":"10.1016/j.spmi.2021.107069","url":null,"abstract":"<div>This study investigated a numerical study of fluid flow and heat transfer in micro channel with four heat sources that located on upper and lower walls. Four heat sources are located in the upper and lower walls symmetrically respect to centerline. Lattice Boltzmann method is used to solve related equations of flow and temperature of fluids, this method is included two steps such as collision and streaming steps. Reynolds number is varied from 0.1 to 10 and Knudsen number is changed from 0 to 0.1 for air. The slip velocity and temperature jump boundary condition are used for micro channel simulation with Knudsen numbers related to slip velocity flow. Bounce-back boundary conditions were applied on all solid boundaries, which means that incoming boundary populations are equal to out-going populations after the collision. A comparison with other study is done and a good result is gained. The results show that the Knudsen number has important role in heat transfer and the highest mean temperature at outlet occurs at highest Knudsen number and heat transfer convection is more significant for first heat source comparing second heat source.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49029760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

BC2P/graphene and BC2P/Black phosphorus van der Waals heterostructures with direct band gap and high carrier mobility, hardness and light absorption BC2P/石墨烯和BC2P/黑磷具有直接带隙、高载流子迁移率、硬度和光吸收的范德华异质结构

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107084

Xi Fu , Xiaoli Cheng , Dan Wu , Wenhu Liao , Jiyuan Guo , Bengang Bao , Liming Li

{"title":"BC2P/graphene and BC2P/Black phosphorus van der Waals heterostructures with direct band gap and high carrier mobility, hardness and light absorption","authors":"Xi Fu , Xiaoli Cheng , Dan Wu , Wenhu Liao , Jiyuan Guo , Bengang Bao , Liming Li","doi":"10.1016/j.spmi.2021.107084","DOIUrl":"10.1016/j.spmi.2021.107084","url":null,"abstract":"<div>In this paper, we stacked graphene, black phosphorus (BP) and a BC2P monolayer to form one BC2P/BP and three BC2P/graphene (-a, -b, -c) vdW heterostructures based on examining the stability of BC2P monolayer predicted by our group. Firstly, we discussed structures and formed possibilities of four vdW heterostructures by calculating binding energies, elastic constants and plane-averaged differential charge densities respectively, and found they are hard 2D materials even larger than the graphene. Secondly, four vdW heterostructures are direct semiconductors with the band gap as 1.053, 1.525, 0.148 and 1.085 eV under the HSE06 or PBE functional respectively, and have at least a high carrier mobility with the value as ∼104 cm2/V·s or up to ∼105 cm2/V·s. Thirdly, under different in-plane stresses from −6% to 6%, their optical absorption coefficient peaks shift from the ultraviolet light area to the visible light area accordingly, and the BC2P/BP heterostructure can transfer from a metal to a semiconductor. Additionally, when the strain ratio is −6%, their absorption coefficients can reach up to the largest value respectively, especially the absorption coefficient of BC2P/BP heterostructure can reach up to the value 29% of incident light. These results make four vdW heterostructures to be well potential materials for the application of photovoltaics and optoelectronics devices.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48078556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of the confining potential on the linewidth of a quantum well 限制势对量子阱线宽的影响

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107068

Nguyen Dinh Hien

{"title":"Influence of the confining potential on the linewidth of a quantum well","authors":"Nguyen Dinh Hien","doi":"10.1016/j.spmi.2021.107068","DOIUrl":"10.1016/j.spmi.2021.107068","url":null,"abstract":"<div>In this theoretical study, we consider in detail the influence of the confining potential on the magneto-optical absorption linewidth (MOALW) of a quantum well for both intersubband and intrasubband magneto-optical transitions. The projection operator method and the profile technique are used to calculate respectively the MO-absorption power and MOALW in both the semiparabolic, parabolic, and the rectangular confining potential quantum wells. The results obtained from the present study show that (i) the MOALW as functions of the structural, material, and external parameters include the confining potential frequency, the well width, the electron density, the temperature, and the magnetic field, as well as Landau level number; (ii) the larger contribution from intrasubband transitions to electron-phonon scattering compared with intersubband transitions for both three type of above confining potentials; (iii) the dependence of the MOALW on the above parameters is found to be the strongest in case of the square confining potential quantum well while it is the weakest in case of the semiparabolic confining potential quantum well for intersubband magneto-optical transitions, however, that for the parabolic confining potential is similar to the rectangular confining potential for intrasubband magneto-optical transitions. Our present calculations accord well with previous experimental studies.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49666953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Design of high extinction ratio silicon electro optic modulator based on coupled hybrid plasmonic waveguide using graphene 基于石墨烯耦合混合等离子体波导的高消光比硅电光调制器设计

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107061

Omid Abbaszadeh-Azar, Kambiz Abedi

{"title":"Design of high extinction ratio silicon electro optic modulator based on coupled hybrid plasmonic waveguide using graphene","authors":"Omid Abbaszadeh-Azar, Kambiz Abedi","doi":"10.1016/j.spmi.2021.107061","DOIUrl":"10.1016/j.spmi.2021.107061","url":null,"abstract":"<div>In this paper, a high extinction ratio (ER) and a low power silicon-plasmonic hybrid electro-optic modulator based on graphene has been proposed and designed. The proposed modulator has three coupled waveguides, two silicon waveguides, and one hybrid plasmonic waveguide. A hybrid plasmonic waveguide has two coupled graphene layers. Two-dimensional hexagonal boron nitride (hBN) and hafnium oxide (HfO2) are used in the plasmonic waveguide. The high performance and quality modulator is obtained with this combination of materials. By electrically adjusting the graphene refractive index as low as a noble metal, the hybrid plasmonic waveguide support the high lossy surface plasmon polariton (SPPs) waves. Therefore, the propagating optical mode experiences high power attenuation. In addition, the coupling length between waveguides is changed, which causes further attenuation of light. The designed modulator has a high ER (11.01 dB/μm), wide f3dB modulation bandwidth (72.2 GHz), and low power consumption (19.36 fJ) at 1.55 μm wavelength. The finite-difference time-domain (FDTD) method is used to investigate the proposed modulator characteristics.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48405839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Phase transition impact on electronic and optical properties of Fe-doped MoSe2 monolayer via N2O adsorption 通过N2O吸附，相变对fe掺杂MoSe2单层电子和光学性能的影响

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107083

Neha Mishra , Bramha P. Pandey , Brijesh Kumar , Santosh Kumar

{"title":"Phase transition impact on electronic and optical properties of Fe-doped MoSe2 monolayer via N2O adsorption","authors":"Neha Mishra , Bramha P. Pandey , Brijesh Kumar , Santosh Kumar","doi":"10.1016/j.spmi.2021.107083","DOIUrl":"10.1016/j.spmi.2021.107083","url":null,"abstract":"<div>Electronic and optical properties of Fe-doped MoSe2 monolayer with (without) N2O gas adsorption are reported in this paper. The impact of N2O gas adsorption on both the properties (electronic, optical) is significantly observed as compared to their pristine MoSe2 monolayer (ML) counterpart. The adsorption energy (Eads) is −0.40 eV for N2O/Fe-doped MoSe2 ML followed by charge transfer of 8.00e for the electronic property. Similarly, for Fe-doping on MoSe2 ML a phase transition from semiconducting to metallic (2H →1T) behavior, is displayed from the band structure analysis. Later, after N2O gas adsorption, semiconducting (2H) behavior is regained due to high electron affinity of Fe-atom, as analyzed from its band structure. Moreover, the work function is modulated from 5.73 eV for pristine MoSe2 ML, to 4.12 eV for Fe–MoSe2 ML and 4.06 eV for N2O/Fe-doped MoSe2 ML post gas adsorption respectively. Further, the imaginary part (ε2) of dielectric constant is shifted from 2.38 to 6.83 arbitrary unit (a.u.) from pristine to N2O/Fe-doped MoSe2 ML, respectively. Noticeably, the refractive index is altered from 1.54 to 6.6 a.u. while absorption index is varied from 1.07 to 0.00 a.u. showing its potential ability to absorb light in the visible region. Lastly, this nature is again confirmed from orbital and molecular level interaction in total density of states plots. This increases its utility to be used for different photovoltaic applications such as photo detectors and display devices.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46742756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition 激光能量对脉冲激光沉积掺钕氧化锌铟薄膜性能的影响

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107059

Xiao Fu , Rihui Yao , Zhihao Liang , Dongxiang Luo , Zhuohui Xu , Yilin Li , Nanhong Chen , Chunyuan Hu , Honglong Ning , Junbiao Peng

{"title":"Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition","authors":"Xiao Fu , Rihui Yao , Zhihao Liang , Dongxiang Luo , Zhuohui Xu , Yilin Li , Nanhong Chen , Chunyuan Hu , Honglong Ning , Junbiao Peng","doi":"10.1016/j.spmi.2021.107059","DOIUrl":"10.1016/j.spmi.2021.107059","url":null,"abstract":"<div>The neodymium (Nd) doped indium-zinc-oxide (NIZO) is a material with high mobility and great potential in transparent electronic devices. NIZO thin films were prepared by pulsed laser deposition (PLD) at 250, 350, 450, and 550 mJ/pulse laser energy, respectively. With the increase of laser energy, the films gradually change from an amorphous to an amorphous/crystalline state and the In2O3 crystals have preferential growth in the (123) plane. The average transmittance of the film is higher than 80% in the visible range. When the laser energy is 250 mJ, the carrier mobility has the highest value of 14.43 cm2 V−1 s−1, and it decreases with the increase of laser energy. The possible reason for this phenomenon is given by electronic structure and crystallization. Based on the content of defect states and the emitted particle number, the carrier concentration of the films is analyzed.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47853870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A possible single event burnout hardening technique for SiC Schottky barrier diodes SiC肖特基势垒二极管单事件燃尽硬化技术的可行性

IF 3.1 3区物理与天体物理

Superlattices and Microstructures Pub Date : 2021-12-01 DOI: 10.1016/j.spmi.2021.107087

Xinfang Liao, Yi Liu, Jing Li, Jialiang Cheng, Yintang Yang

{"title":"A possible single event burnout hardening technique for SiC Schottky barrier diodes","authors":"Xinfang Liao, Yi Liu, Jing Li, Jialiang Cheng, Yintang Yang","doi":"10.1016/j.spmi.2021.107087","DOIUrl":"10.1016/j.spmi.2021.107087","url":null,"abstract":"<div>SiC Schottky barrier diodes (SBDs) are sensitive to single event burnout (SEB) caused by the high-energy particle strikes, which greatly restricts their applications in the aerospace field. In this paper, we investigate the SEB performance of SiC SBDs with the electro-thermal coupled simulation model using the Sentaurus TCAD simulator. The simulation results show that reducing the reverse voltage can improve the SEB robustness because of the lower impact ionization rate and current density at lower reverse voltage. Based on this, we propose a novel SEB hardening technique of connecting two SiC SBDs in series. Since the voltage across the diode which is hit by the heavy ion can transfer to the other diode in time, the peak temperature attained is greatly reduced, and the SEB robustness is effectively improved for the hardening structure. Due to the low on-state resistance and power dissipation of SiC SBDs, the doubling of the on-state resistance for the series structure will not be a problem. In addition, with the advantages of simple implementation and strong recoverability, the hardening structure proposed in this paper is expected to be applied in practice.</div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47314013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6