Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Rui Li , Mingsheng Xu , Chengxin Wang , Shangda Qu , Kaiju Shi , Changfu Li , Xiangang Xu , Ziwu Ji
{"title":"Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures","authors":"Rui Li ,&nbsp;Mingsheng Xu ,&nbsp;Chengxin Wang ,&nbsp;Shangda Qu ,&nbsp;Kaiju Shi ,&nbsp;Changfu Li ,&nbsp;Xiangang Xu ,&nbsp;Ziwu Ji","doi":"10.1016/j.spmi.2021.107090","DOIUrl":null,"url":null,"abstract":"<div><p>Two light-emitting diodes (LEDs) enabled by InGaN/GaN multiple quantum wells<span> (MQWs) with different well layer growth temperatures (WLGTs) were prepared. The dependences of electroluminescence (EL) spectra of these two structures on temperature at various fixed injection currents indicate that, a decreasing WLGT can result in a conversion of the well layer structure from a one-zone structure with better homogeneity in the localization depth into a two-zone structure with different average In contents and different localization depths, due to the increased In content-induced enhanced component fluctuation. The former is inferred from an “inverted-V-shaped” (increasing-decreasing) temperature-dependent behavior of peak energy at all fixed currents; the latter is mainly inferred from an “M-shaped” (increasing-decreasing-increasing-decreasing) temperature-dependent behavior of peak energy at intermediate fixed currents. These explanations also match those given for temperature-dependent behaviors in terms of external quantum efficiency (EQE) of these two LEDs, including “M-shaped” temperature-dependent behaviors of the EQE of LED B at the intermediate fixed currents.</span></p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":"160 ","pages":"Article 107090"},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002883","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 3

Abstract

Two light-emitting diodes (LEDs) enabled by InGaN/GaN multiple quantum wells (MQWs) with different well layer growth temperatures (WLGTs) were prepared. The dependences of electroluminescence (EL) spectra of these two structures on temperature at various fixed injection currents indicate that, a decreasing WLGT can result in a conversion of the well layer structure from a one-zone structure with better homogeneity in the localization depth into a two-zone structure with different average In contents and different localization depths, due to the increased In content-induced enhanced component fluctuation. The former is inferred from an “inverted-V-shaped” (increasing-decreasing) temperature-dependent behavior of peak energy at all fixed currents; the latter is mainly inferred from an “M-shaped” (increasing-decreasing-increasing-decreasing) temperature-dependent behavior of peak energy at intermediate fixed currents. These explanations also match those given for temperature-dependent behaviors in terms of external quantum efficiency (EQE) of these two LEDs, including “M-shaped” temperature-dependent behaviors of the EQE of LED B at the intermediate fixed currents.

不同温度下生长InGaN阱层的InGaN/GaN MQW led的发射特性
制备了两种不同井层生长温度的InGaN/GaN多量子阱(mqw)致能的发光二极管(led)。在不同固定注入电流下,两种结构的电致发光光谱对温度的依赖性表明,由于in含量的增加引起的组分波动增强,WLGT的减小会导致井层结构从局域深度均匀性较好的单区结构转变为平均in含量不同且局域深度不同的两区结构。前者是从所有固定电流下峰值能量的“倒v形”(增加-减少)温度依赖行为推断出来的;后者主要是由中间固定电流下峰值能量随温度的“m”型(增加-减少-增加-减少)行为推断出来的。这些解释也与这两个LED的外部量子效率(EQE)的温度依赖行为相匹配,包括LED B在中间固定电流下的“m形”外部量子效率的温度依赖行为。
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来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Superlattices and Microstructures has continued as Micro and Nanostructures. Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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