Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao
{"title":"基于机械剥离工艺的柔性β-Ga2O3肖特基势垒二极管特性","authors":"Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao","doi":"10.1016/j.spmi.2021.107078","DOIUrl":null,"url":null,"abstract":"<div><p>The flexible transverse β-Ga<sub>2</sub>O<sub>3</sub><span> Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga</span><sub>2</sub>O<sub>3</sub><span><span> single crystal film onto muscovite, and its </span>electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0–1 V and decreases in the large voltage range of 1–4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (g</span><sub>m</sub>) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of g<sub>m</sub> drifts to the right. In addition, the switch ratio of the device under flat conditions is 10<sup>8</sup>, whereas in bending tests the switch ratio is 10<sup>7</sup> which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process\",\"authors\":\"Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao\",\"doi\":\"10.1016/j.spmi.2021.107078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The flexible transverse β-Ga<sub>2</sub>O<sub>3</sub><span> Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga</span><sub>2</sub>O<sub>3</sub><span><span> single crystal film onto muscovite, and its </span>electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0–1 V and decreases in the large voltage range of 1–4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (g</span><sub>m</sub>) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of g<sub>m</sub> drifts to the right. In addition, the switch ratio of the device under flat conditions is 10<sup>8</sup>, whereas in bending tests the switch ratio is 10<sup>7</sup> which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.</p></div>\",\"PeriodicalId\":22044,\"journal\":{\"name\":\"Superlattices and Microstructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superlattices and Microstructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0749603621002767\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002767","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process
The flexible transverse β-Ga2O3 Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga2O3 single crystal film onto muscovite, and its electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0–1 V and decreases in the large voltage range of 1–4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (gm) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of gm drifts to the right. In addition, the switch ratio of the device under flat conditions is 108, whereas in bending tests the switch ratio is 107 which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.
期刊介绍:
Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover:
• Novel micro and nanostructures
• Nanomaterials (nanowires, nanodots, 2D materials ) and devices
• Synthetic heterostructures
• Plasmonics
• Micro and nano-defects in materials (semiconductor, metal and insulators)
• Surfaces and interfaces of thin films
In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board.
Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4