Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process

IF 3.3 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Superlattices and Microstructures Pub Date : 2021-12-01 DOI:10.1016/j.spmi.2021.107078

Di Zhang , Haifeng Chen , Wei He , Zifan Hong , Qin Lu , Lixin Guo , Tao Liu , Xiangtai Liu , Yue Hao

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引用次数: 3

Abstract

The flexible transverse β-Ga₂O₃ Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga₂O₃ single crystal film onto muscovite, and its electrical characteristic under flat and bending conditions were tested. It is found that the forward current of the device after bending increases in the small voltage range of 0–1 V and decreases in the large voltage range of 1–4.5 V as the curvature increases. This result is attributed to the two mechanisms that the barrier height decreases and the scattering increases with the increase of the curvature. The decrease in barrier height makes it easier for electrons to migrate from the cathode to the anode in small voltage range, while the current decreases in large voltage range due to scattering. It is further found that the maximum transconductance (g_m) and subthreshold swing (SS) deteriorate with the increase of curvature and the corresponding voltage value of g_m drifts to the right. In addition, the switch ratio of the device under flat conditions is 10⁸, whereas in bending tests the switch ratio is 10⁷ which is only reduced by one order of magnitude and it is essentially the same as the current level under flat conditions.

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基于机械剥离工艺的柔性β-Ga2O3肖特基势垒二极管特性

将剥离的β-Ga2O3单晶薄膜转移到白云母上制备了柔性横向β-Ga2O3肖特基势垒二极管(SBD)，并测试了其在平面和弯曲条件下的电学特性。发现弯曲后器件的正向电流在0 ~ 1 V的小电压范围内随着曲率的增大而增大，在1 ~ 4.5 V的大电压范围内随着曲率的增大而减小。这一结果可归因于两种机制，即势垒高度随曲率的增大而减小，散射随曲率的增大而增大。势垒高度的降低使电子在小电压范围内更容易从阴极向阳极迁移，而在大电压范围内由于散射导致电流减小。进一步发现，最大跨导(gm)和亚阈值摆幅(SS)随曲率的增大而变差，相应的gm电压值向右漂移。此外，该装置在平坦条件下的开关比为108，而在弯曲试验中，开关比为107，仅降低了一个数量级，与平坦条件下的电流水平基本相同。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Superlattices and Microstructures 物理-物理：凝聚态物理

CiteScore

6.10

自引率

3.20%

发文量

审稿时长

2.8 months

期刊介绍： Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4