Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Naveen Kumar, Subhash Chand
{"title":"Scrutinization of non‒saturation behaviour of reverse current‒voltage characteristics in Ni/SiO2/p-Si/Al diodes","authors":"Naveen Kumar,&nbsp;Subhash Chand","doi":"10.1016/j.spmi.2021.107088","DOIUrl":null,"url":null,"abstract":"<div><p>The present work is an endeavour to investigate non‒saturation behaviour of reverse current in Ni/SiO<sub>2</sub>/<em>p</em><span>-Si/Al over a wide low temperature range of 70–300 K at step of 10 K using well accepted models i.e., Poole-Frenkel emission, Schottky emission and Fowler‒Nordheim tunneling mechanisms. The results of the study revealed that Schottky emission has the dominance over Poole-Frenkel emission in the temperature range of 200–300 K with the trap state activation energy of 0.17 eV. In the remaining temperature range trap assisted tunnelling and involvement of other mechanisms were suggested. Further, the Fowler‒Nordheim tunneling mechanism was found to be effective above reverse bias of 0.5 V over the entire temperature range of 70–300 K. Thus, variation of barrier height with temperature was examined using Fowler‒Nordheim tunneling model and it was found to increase from 0.17 eV to 0.28 eV as temperature varied from 300 to 70 K. The increase in barrier height with decrease in temperature corroborates the decrease in reverse current with temperature.</span></p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S074960362100286X","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 2

Abstract

The present work is an endeavour to investigate non‒saturation behaviour of reverse current in Ni/SiO2/p-Si/Al over a wide low temperature range of 70–300 K at step of 10 K using well accepted models i.e., Poole-Frenkel emission, Schottky emission and Fowler‒Nordheim tunneling mechanisms. The results of the study revealed that Schottky emission has the dominance over Poole-Frenkel emission in the temperature range of 200–300 K with the trap state activation energy of 0.17 eV. In the remaining temperature range trap assisted tunnelling and involvement of other mechanisms were suggested. Further, the Fowler‒Nordheim tunneling mechanism was found to be effective above reverse bias of 0.5 V over the entire temperature range of 70–300 K. Thus, variation of barrier height with temperature was examined using Fowler‒Nordheim tunneling model and it was found to increase from 0.17 eV to 0.28 eV as temperature varied from 300 to 70 K. The increase in barrier height with decrease in temperature corroborates the decrease in reverse current with temperature.

Ni/SiO2/p-Si/Al二极管反向电流-电压特性的非饱和行为研究
目前的工作是利用公认的模型,即Poole-Frenkel发射、Schottky发射和Fowler-Nordheim隧道机制,研究Ni/SiO2/p-Si/Al中反向电流在70-300 K宽低温范围内以10 K步进的非饱和行为。研究结果表明,在200 ~ 300 K范围内,阱态活化能为0.17 eV,肖特基发射优于普尔-弗伦克尔发射。在剩余的温度范围内,提出了陷阱辅助隧道作用和其他机制的参与。此外,在70-300 K的整个温度范围内,Fowler-Nordheim隧穿机制在0.5 V的反向偏置下是有效的。因此,利用Fowler-Nordheim隧道模型研究了势垒高度随温度的变化,发现当温度从300到70 K变化时,势垒高度从0.17 eV增加到0.28 eV。势垒高度随温度的降低而增加,证实了逆流随温度的降低。
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来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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