{"title":"AlGaN/GaN HEMT在pH传感中的应用及灵敏度优化研究","authors":"Aasif Mohammad Bhat, Nawaz shafi, C. Periasamy","doi":"10.1016/j.spmi.2021.107067","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>In this work, AlGaN/GaN HEMT pH sensitive response has been presented through extensive simulations demonstrating the effect of pH variation on channel conductance, potential and </span>conduction band<span><span> profile. The pH solution is defined by an intrinsic semiconductor material whose properties are modified to mimic electrolyte solution and the effect of variation in charged adsorbates is accommodated by adjusting the interface charges density at oxide-semiconductor interface. The effect of AlGaN barrier layer composition (thickness and </span>Aluminum mole fraction) on the sensitivity was analyzed by simulating different device configurations using ATLAS Silvaco device simulation tool. The devices render improved voltage sensitivity (S</span></span><sub>V</sub> = ΔV<sub>r</sub>/pH) and high output current sensitivity (S<sub>I</sub> = (ΔI<sub>ds</sub>/pH) = 15 mA/mm-pH). The simulations predict a thinner barrier layer along with smaller mole fraction device is most sensitive to pH changes at the surface for an open gate operation.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization\",\"authors\":\"Aasif Mohammad Bhat, Nawaz shafi, C. Periasamy\",\"doi\":\"10.1016/j.spmi.2021.107067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span><span>In this work, AlGaN/GaN HEMT pH sensitive response has been presented through extensive simulations demonstrating the effect of pH variation on channel conductance, potential and </span>conduction band<span><span> profile. The pH solution is defined by an intrinsic semiconductor material whose properties are modified to mimic electrolyte solution and the effect of variation in charged adsorbates is accommodated by adjusting the interface charges density at oxide-semiconductor interface. The effect of AlGaN barrier layer composition (thickness and </span>Aluminum mole fraction) on the sensitivity was analyzed by simulating different device configurations using ATLAS Silvaco device simulation tool. The devices render improved voltage sensitivity (S</span></span><sub>V</sub> = ΔV<sub>r</sub>/pH) and high output current sensitivity (S<sub>I</sub> = (ΔI<sub>ds</sub>/pH) = 15 mA/mm-pH). The simulations predict a thinner barrier layer along with smaller mole fraction device is most sensitive to pH changes at the surface for an open gate operation.</p></div>\",\"PeriodicalId\":22044,\"journal\":{\"name\":\"Superlattices and Microstructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superlattices and Microstructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0749603621002652\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002652","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization
In this work, AlGaN/GaN HEMT pH sensitive response has been presented through extensive simulations demonstrating the effect of pH variation on channel conductance, potential and conduction band profile. The pH solution is defined by an intrinsic semiconductor material whose properties are modified to mimic electrolyte solution and the effect of variation in charged adsorbates is accommodated by adjusting the interface charges density at oxide-semiconductor interface. The effect of AlGaN barrier layer composition (thickness and Aluminum mole fraction) on the sensitivity was analyzed by simulating different device configurations using ATLAS Silvaco device simulation tool. The devices render improved voltage sensitivity (SV = ΔVr/pH) and high output current sensitivity (SI = (ΔIds/pH) = 15 mA/mm-pH). The simulations predict a thinner barrier layer along with smaller mole fraction device is most sensitive to pH changes at the surface for an open gate operation.
期刊介绍：
Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover:
• Novel micro and nanostructures
• Nanomaterials (nanowires, nanodots, 2D materials ) and devices
• Synthetic heterostructures
• Plasmonics
• Micro and nano-defects in materials (semiconductor, metal and insulators)
• Surfaces and interfaces of thin films
In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board.
Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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