Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

IF 3.3 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Superlattices and Microstructures Pub Date : 2021-12-01 DOI:10.1016/j.spmi.2021.107085

Walid Filali , Rachid Amrani , Elyes Garoudja , Slimane Oussalah , Fouaz Lekoui , Zineb Oukerimi , Nouredine Sengouga , Mohamed Henini

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引用次数: 3

Abstract

In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al_0.29Ga_0.71As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density $(N_{s s})$ as function of the difference between the surface state energy and valence band energy $(E_{s s} - E_{V})$ was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.

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利用蜻蜓算法优化be掺杂Al0.29Ga0.71As肖特基二极管参数的识别:热效应研究

本文首次采用蜻蜓算法(Dragonfly Algorithm, DA)来研究温度对肖特基二极管电学参数的影响。用分子束外延(MBE)生长的掺铍Al0.29Ga0.71As肖特基二极管对所提方法进行了验证。该方法基于对电流-电压-温度(I-V-T)和电容-电压(C-V)特性的分析。此外，还确定了界面态密度(Nss)作为表面态能与价带能(Ess−EV)之差的函数。实验结果表明，该方法可以准确地确定电参数并研究它们的温度依赖性。这种效率可以从预测和测量电流特性之间的良好拟合中清楚地看出。

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来源期刊

Superlattices and Microstructures 物理-物理：凝聚态物理

CiteScore

6.10

自引率

3.20%

发文量

审稿时长

2.8 months

期刊介绍： Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4

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