Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair
{"title":"使用In0.12Ga0.88N放松模板将LED发射从蓝色到绿色间隙光谱范围","authors":"Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair","doi":"10.1016/j.spmi.2021.107065","DOIUrl":null,"url":null,"abstract":"<div><p>In<sub>y</sub>Ga<sub>1-y</sub>N templates are grown with <em>y</em><span> ≤ 13.5% and a few nm surface roughness<span>. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed In</span></span><sub>y</sub>Ga<sub>1-y</sub>N templates with <em>y</em><span> of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of </span><em>y</em>, in addressing problems facing long wavelength InGaN LEDs.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates\",\"authors\":\"Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair\",\"doi\":\"10.1016/j.spmi.2021.107065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In<sub>y</sub>Ga<sub>1-y</sub>N templates are grown with <em>y</em><span> ≤ 13.5% and a few nm surface roughness<span>. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed In</span></span><sub>y</sub>Ga<sub>1-y</sub>N templates with <em>y</em><span> of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of </span><em>y</em>, in addressing problems facing long wavelength InGaN LEDs.</p></div>\",\"PeriodicalId\":22044,\"journal\":{\"name\":\"Superlattices and Microstructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superlattices and Microstructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0749603621002639\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002639","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates
InyGa1-yN templates are grown with y ≤ 13.5% and a few nm surface roughness. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed InyGa1-yN templates with y of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of y, in addressing problems facing long wavelength InGaN LEDs.
期刊介绍:
Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover:
• Novel micro and nanostructures
• Nanomaterials (nanowires, nanodots, 2D materials ) and devices
• Synthetic heterostructures
• Plasmonics
• Micro and nano-defects in materials (semiconductor, metal and insulators)
• Surfaces and interfaces of thin films
In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board.
Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4