使用In0.12Ga0.88N放松模板将LED发射从蓝色到绿色间隙光谱范围

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Mostafa Abdelhamid , Evyn L. Routh , Ahmed Shaker , S.M. Bedair
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引用次数: 3

摘要

InyGa1-yN模板的生长条件为y≤13.5%,表面粗糙度为nm。这些模板成功地解决了长波发光led面临的两个主要问题,主要是低生长温度和量子阱(qw)中的高应变值。在这项工作中,研究了三种LED结构:第一种是在GaN上生长的蓝色LED,第二种和第三种是在y约为10%和12%的松弛InyGa1-yN模板上生长的绿色LED。在三种LED结构中使用相同的多量子阱(mqw),具有相同的阱宽度、势垒宽度和生长温度。由于使用InGaN模板,qw中的应变降低,从而提高了qw中的铟掺入率。在低注入电流下,在发射波长约100 nm处实现了从470 nm到570 nm的红移。光输出功率和外部量子效率(EQE)测量表明,在高电流注入水平下,蓝色LED的性能约为InGaN模板上绿色发光LED的两倍。目前的结果表明,具有高y值的InGaN模板方法在解决长波InGaN led面临的问题方面具有潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

InyGa1-yN templates are grown with y ≤ 13.5% and a few nm surface roughness. These templates are used successfully to address two of the main issues facing long wavelength emitting LEDs, mainly the low growth temperature and high values of strain in the quantum wells (QWs). In this work, three LED structures are investigated: the first is a blue LED grown on GaN, the second and third are green LEDs grown on relaxed InyGa1-yN templates with y of about 10% and 12%, respectively. The same multiple quantum wells (MQWs) were used in the three LED structures, with the same well width, barrier width, and growth temperature. The reduced strain in the QWs due to the use of InGaN templates enhances the indium incorporation rate in the QWs. Red shift in emission wavelength of about 100 nm, from 470 nm to 570 nm, was achieved, at low injection current. Optical output power and external quantum efficiency (EQE) measurements showed that at high level of current injection, performance of the blue LED is about twice of the green emitting LEDs on InGaN templates. The current results indicate the potential of the InGaN template approach, with high values of y, in addressing problems facing long wavelength InGaN LEDs.

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来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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