{"title":"利用蜻蜓算法优化be掺杂Al0.29Ga0.71As肖特基二极管参数的识别:热效应研究","authors":"Walid Filali , Rachid Amrani , Elyes Garoudja , Slimane Oussalah , Fouaz Lekoui , Zineb Oukerimi , Nouredine Sengouga , Mohamed Henini","doi":"10.1016/j.spmi.2021.107085","DOIUrl":null,"url":null,"abstract":"<div><p><span>In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al</span><sub>0.29</sub>Ga<sub>0.71</sub><span>As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density </span><span><math><mrow><mo>(</mo><msub><mi>N</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>)</mo></mrow></math></span><span> as function of the difference between the surface state energy and valence band energy </span><span><math><mrow><mo>(</mo><msub><mi>E</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>−</mo><msub><mi>E</mi><mi>V</mi></msub><mo>)</mo></mrow></math></span> was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.</p></div>","PeriodicalId":22044,"journal":{"name":"Superlattices and Microstructures","volume":"160 ","pages":"Article 107085"},"PeriodicalIF":3.3000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study\",\"authors\":\"Walid Filali , Rachid Amrani , Elyes Garoudja , Slimane Oussalah , Fouaz Lekoui , Zineb Oukerimi , Nouredine Sengouga , Mohamed Henini\",\"doi\":\"10.1016/j.spmi.2021.107085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span>In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al</span><sub>0.29</sub>Ga<sub>0.71</sub><span>As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density </span><span><math><mrow><mo>(</mo><msub><mi>N</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>)</mo></mrow></math></span><span> as function of the difference between the surface state energy and valence band energy </span><span><math><mrow><mo>(</mo><msub><mi>E</mi><mrow><mi>s</mi><mi>s</mi></mrow></msub><mo>−</mo><msub><mi>E</mi><mi>V</mi></msub><mo>)</mo></mrow></math></span> was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.</p></div>\",\"PeriodicalId\":22044,\"journal\":{\"name\":\"Superlattices and Microstructures\",\"volume\":\"160 \",\"pages\":\"Article 107085\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Superlattices and Microstructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0749603621002834\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Superlattices and Microstructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0749603621002834","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study
In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al0.29Ga0.71As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density as function of the difference between the surface state energy and valence band energy was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.
期刊介绍:
Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover:
• Novel micro and nanostructures
• Nanomaterials (nanowires, nanodots, 2D materials ) and devices
• Synthetic heterostructures
• Plasmonics
• Micro and nano-defects in materials (semiconductor, metal and insulators)
• Surfaces and interfaces of thin films
In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board.
Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4