2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)最新文献_第5页

Performance analysis of multi-VT design solutions in 28nm UTBB FD-SOI technology 基于28nm UTBB FD-SOI技术的多vt设计方案性能分析

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716548

B. Pelloux-Prayer, Milovan Blagojevic, S. Haendler, A. Valentian, A. Amara, P. Flatresse

引用次数: 19

Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment 高温环境下金刚石MOSFET与常规MOSFET的实验比较研究

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716568

E. Galembeck, C. Renaux, D. Flandre, S. Gimenez

引用次数: 8

280mV sense amplifier designed in 28nm UTBB FD-SOI technology using back-biasing control 280mV感测放大器采用28nm UTBB FD-SOI技术，采用后偏置控制

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716525

A. Feki, D. Turgis, Jean-Christophe Lafont, B. Allard

{"title":"280mV sense amplifier designed in 28nm UTBB FD-SOI technology using back-biasing control","authors":"A. Feki, D. Turgis, Jean-Christophe Lafont, B. Allard","doi":"10.1109/S3S.2013.6716525","DOIUrl":"https://doi.org/10.1109/S3S.2013.6716525","url":null,"abstract":"Sub-threshold operation of circuits becomes more and more attractive due to the ultra-low power consumption. Static Random Access Memory (SRAM) faces an important limitation in read access time that prevents high frequency operation and the possible applications. The read access time under ultra-low voltage (ULV) operation is mainly dictated by the read current of the SRAM bit cell and the bit line effective capacitance. The full swing sensing is a practical approach to circumvent the poor performances of sense amplifiers (SA) under ULV operation. This paper details first the optimization of a differential voltage-sense amplifier under ULV for SRAMs with differential bit lines. Second an unbalanced voltage-sense amplifier is presented for single-ended reading under ULV. Both circuits exploit the benefit of 28nm FDSOI and back biasing technique to improve SAs' performances, namely the delay. Both ultra-wide voltage-range SAs achieve satisfying operation down to 280mV power supply. Simulation results are presented regarding a 1K×32 L1 cache test chip to be fabricated in 28FDSOI technology.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129469293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology UTBOX FDSOI高钾金属栅极技术中背偏置导致迁移率增强的证据

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716551

I. Ben Akkez, C. Fenouillet-Béranger, A. Cros, F. Balestra, G. Ghibaudo

引用次数: 4

0.42-to-1.20V read assist circuit for SRAMs in CMOS 65nm 用于CMOS 65nm的sram的0.42至1.20 v读辅助电路

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716578

F. Abouzeid, S. Clerc, B. Pelloux-Prayer, P. Roche

引用次数: 2

Simulation of statistical variability in nanometer scale CMOS devices 纳米级CMOS器件统计变异性的模拟

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716537

A. Asenov

引用次数: 1

An ultra low energy 9T half-select-free subthreshold SRAM bitcell 一种超低能量9T半自由选择亚阈值SRAM位元

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716577

A. Banerjee, B. Calhoun

引用次数: 2

Thermal considerations for monolithic integration of three-dimensional integrated circuits 三维集成电路单片集成的热考虑

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716559

A. Henning, B. Rajendran, B. Cronquist, Z. Or-Bach

引用次数: 4

Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs 超薄盒型SOI finfet的Vth柔性分析

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716563

K. Endo, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

引用次数: 1

SOI and Engineered-SOI, ideal platforms for building MEMS SOI和工程SOI是构建MEMS的理想平台

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI: 10.1109/S3S.2013.6716582

F. Assaderaghi

{"title":"SOI and Engineered-SOI, ideal platforms for building MEMS","authors":"F. Assaderaghi","doi":"10.1109/S3S.2013.6716582","DOIUrl":"https://doi.org/10.1109/S3S.2013.6716582","url":null,"abstract":"MEMS (Micro-Electro-Mechanical Systems) have been developed over the past 40 years with ink jet, pressure sensor and accelerometers driving the technology. The last decade has particularly witnessed a tremendous commercial success of MEMS, addressing a plethora of functions such as screen orientation, gesture recognition, timing, voice input and location-based services. This success is the result of continually making these transducers including gyroscopes, accelerometers, resonators, microphones, and magnetometers smaller, lower power, more manufacturable, lower cost, more robust, and more functionally integrated. These characteristics, in turn, have come about by MEMS developers applying and extending the process technology used for fabrication of microelectronics. In fact, the wafer level batch processing has been the foundation of low-cost high-volume manufacturing of MEMS. Although a wide variety of materials are used in building MEMS, silicon has become the dominant choice due to its several useful properties. Single crystalline silicon (SCS) is particularly an excellent structural material for MEMS. SOI and Engineered SOI (ESOI) provide simple and elegant ways of creating transducers from SCS.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116875196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3