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纳米级CMOS器件统计变异性的模拟

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716537
A. Asenov
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引用次数: 1

摘要

在本文中，我们将介绍先进CMOS器件和电路中统计变异性和可靠性模拟的最新进展。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Simulation of statistical variability in nanometer scale CMOS devices
In this paper we will present recent advances in the simulation of statistical variability and reliability in advanced CMOS devices and circuits.
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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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