Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

Abstract

We have successfully demonstrated a V_th controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the V_th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V_th controllability in terms of the size dependence such as the gate length (L_G) and the fin width (T_Fin).