UTBOX FDSOI高钾金属栅极技术中背偏置导致迁移率增强的证据

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716551

I. Ben Akkez, C. Fenouillet-Béranger, A. Cros, F. Balestra, G. Ghibaudo

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引用次数: 4

摘要

在这项工作中，我们研究了背偏对超薄盒完全耗尽SOI器件有效迁移率的影响。通过对大型N & PMOS晶体管载流子迁移率的提取，对于薄栅极氧化物(GO1)和厚栅极氧化物(GO2)，强调了表面粗糙度和有效场在降低迁移率中的重要作用。此外，这些电学结果第一次被泊松方程与Hansch的量子模拟相结合证实。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evidence of mobility enhancement due to back biasing in UTBOX FDSOI high-k metal gate technology

In this work, we study the effect of the back biasing on the effective mobility in Ultra-Thin Box Fully Depleted SOI devices. Thanks to the carrier mobility extraction on large N & PMOS transistors, for thin (GO1) and thick gate oxide (GO2), the important role of the surface roughness and effective field in the mobility reduction is highlighted. Moreover, for the first time these electrical results have been corroborated by Poisson equation coupled with Hansch's quantum simulations.

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来源期刊

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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