Sensors and Actuators A-physical最新文献_第6页

Numerical demonstration of low-dark-current photodetector using phoxonic crystal waveguide for midwave infrared (MWIR) sensing 光子晶体波导用于中波红外传感的低暗电流光电探测器的数值演示

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI: 10.1016/j.sna.2025.116634

Anurag Sharma , Jyoti kedia , Neena Gupta

{"title":"Numerical demonstration of low-dark-current photodetector using phoxonic crystal waveguide for midwave infrared (MWIR) sensing","authors":"Anurag Sharma , Jyoti kedia , Neena Gupta","doi":"10.1016/j.sna.2025.116634","DOIUrl":"10.1016/j.sna.2025.116634","url":null,"abstract":"<div><div>While currently used silicon-germanium (SiGe) and germanium-on-insulator (Ge-OI) waveguide photodetectors offer CMOS-compatible alternatives, but their performance is often hindered by high dark currents and limited responsivity. These photodetectors have always been suffering from high-dark currents due to significant photon-phonon scattering losses. This study presents a numerical demonstration of novel waveguide photodetector which has been designed to suppress the photon-phonon interactions using phoxonic crystal-based Ge/SiGe waveguide to enhance MWIR detection performance. By suppressing unwanted lattice vibrations, the proposed PxC waveguide achieves ultra-low dark currents (0.06–0.15 nA) and high responsivity (0.28–0.4 A/W) at a low bias (-1V). Compared to conventional Ge-OI and SiGe rib waveguides, which exhibit dark currents ranging from 35 nA to 416μA, the proposed PxC photodetector demonstrates a 3–4 orders of magnitude reduction in dark current. The PxC-based structure also achieves <strong>a</strong> responsivity enhancement of up to 33 % over Ge/SiGe-on-insulator rib waveguides, while maintaining a broad operational wavelength range of 3–5 µm, making it highly suitable for low-noise MWIR sensing.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116634"},"PeriodicalIF":4.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel fractional-order framework for creep nonlinearity in piezoelectric actuators 压电致动器蠕变非线性的分数阶框架

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI: 10.1016/j.sna.2025.116639

Zhongxiang Yuan , Xiaoqing Li , Ziyu Xiao , Zhengguang Zhang , Shuliu Zhou , Cailin Hong , Xuedong Chen , Lizhan Zeng , Yunlong Wang , Jiulin Wu

{"title":"A novel fractional-order framework for creep nonlinearity in piezoelectric actuators","authors":"Zhongxiang Yuan , Xiaoqing Li , Ziyu Xiao , Zhengguang Zhang , Shuliu Zhou , Cailin Hong , Xuedong Chen , Lizhan Zeng , Yunlong Wang , Jiulin Wu","doi":"10.1016/j.sna.2025.116639","DOIUrl":"10.1016/j.sna.2025.116639","url":null,"abstract":"<div><div>Due to their exceptional resolution, rapid response, and versatility, piezoelectric actuators (PEAs) find extensive application in high-end fields such as nano-positioning, semiconductor manufacturing, and space exploration. However, the nonlinear effects associated with creep significantly restrict the full performance potential of PEAs under extreme conditions. To address this limitation, we propose a fractional calculus-based model that effectively captures the multi-scale and complex dynamics of creep phenomena. This model incorporates only two unknown parameters, thereby simplifying the parameter identification process. Through comprehensive theoretical analysis, simulation, and experimental validation, our model has demonstrated considerable advantages in terms of accuracy and applicability, with relative error in both the frequency and time domains below 6 %. The proposed fractional creep model and its associated parameter identification technique are anticipated to enhance the long-term precision of PEAs, paving the way for future advancements in ultra-high-precision actuation technology.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116639"},"PeriodicalIF":4.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A generative artificial intelligence model for efficient gas sensitivity prediction in materials without parameters from first principle calculation 基于第一性原理计算的无参数材料气敏预测生成式人工智能模型

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI: 10.1016/j.sna.2025.116636

Qiuchen Yu , Mengjiao Zhao , Qingning Han , Yu Chen , Zijiang Yang , Shasha Gao , Sheng Huang

{"title":"A generative artificial intelligence model for efficient gas sensitivity prediction in materials without parameters from first principle calculation","authors":"Qiuchen Yu , Mengjiao Zhao , Qingning Han , Yu Chen , Zijiang Yang , Shasha Gao , Sheng Huang","doi":"10.1016/j.sna.2025.116636","DOIUrl":"10.1016/j.sna.2025.116636","url":null,"abstract":"<div><div>High gas sensitivity materials are crucial for the development of high-performance gas sensors. Traditionally, obtaining such materials has relied on trial and error, a process that is time-consuming, resource-intensive and laborious. In this study, an intelligent predictive framework using a generative artificial intelligence model is presented, which predicts the gas sensitivity of target materials with remarkable speed and accuracy. To validate the proposed framework, a material database is constructed using ZnO doped with eight different metal atoms, which serves as representative materials. Subsequently, 25 physical parameters, including crystal structure and electronic structure, are calculated using first-principles calculations. Eight intelligent learning models are then trained to predict sensitivity, with the Extremely Randomized Trees model performing the best, achieving a mean square error of 0.02. By combining feature engineering with generative artificial intelligence models, a novel model based on intrinsic atomic features (radius, electronegativity, first ionization energy) is developed, which enables the prediction of CO gas sensitivity in doped ZnO using the generated 12 key parameters, without any parameters from first principle calculation, thus significantly reducing the time and cost associated with discovering gas-sensitive properties. This predictive framework can be easily extended to other materials, facilitating the functional development of materials.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116636"},"PeriodicalIF":4.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of substrate temperature on SnSe2/TiO2 heterostructure for photodetector applications 衬底温度对光电探测器中SnSe2/TiO2异质结构的影响

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI: 10.1016/j.sna.2025.116641

Kuri Manjunatha , Devarajan Alagarasan , Shreyasi Das , R. Ganesan , R. Naik , Dayakrishn Purohit , M. Ramudu

{"title":"Influence of substrate temperature on SnSe2/TiO2 heterostructure for photodetector applications","authors":"Kuri Manjunatha , Devarajan Alagarasan , Shreyasi Das , R. Ganesan , R. Naik , Dayakrishn Purohit , M. Ramudu","doi":"10.1016/j.sna.2025.116641","DOIUrl":"10.1016/j.sna.2025.116641","url":null,"abstract":"<div><div>Recent advances in 2D material-based heterostructures have opened up new possibilities for high-performance, low-power photodetectors. Among these, SnSe₂ a layered metal di-chalcogenide has gained attention due to its high electron mobility and strong light–matter interaction. However, their usage is confined to narrow wavelength detection. To extend their usage for broadband detection, formation of heterojunction is necessary. In this work, SnSe₂/TiO₂ mixed-dimensional heterostructures were fabricated via thermal evaporation method at varying substrate temperatures from 50 °C - 250 °C to explore their potential in optoelectronic applications. Structural, morphological, and optical characterizations revealed that substrate temperature significantly influence the crystallite size, surface morphology, transmittance, and bandgap. Photodetector devices based on these heterostructures exhibited impressive responsivity (52 mA/W) and detectivity (5.42 × 10⁸ Jones) under 0 V bias, with rapid photoresponse characteristics (rise time: 174 ms; decay time: 241 ms). This study not only demonstrates an effective strategy for SnSe₂-based heterojunction formation but also highlights the promise of mixed-dimensional systems for next-generation photodetectors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116641"},"PeriodicalIF":4.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D Structural damage visualisation in fiber composites via a smart 3D capacitive printed sensor network 基于智能3D电容打印传感器网络的纤维复合材料结构损伤可视化

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-28 DOI: 10.1016/j.sna.2025.116643

Georgios Foteinidis, Lampros Koutsotolis, Angelos Ntaflos, Alkiviadis S. Paipetis

{"title":"3D Structural damage visualisation in fiber composites via a smart 3D capacitive printed sensor network","authors":"Georgios Foteinidis, Lampros Koutsotolis, Angelos Ntaflos, Alkiviadis S. Paipetis","doi":"10.1016/j.sna.2025.116643","DOIUrl":"10.1016/j.sna.2025.116643","url":null,"abstract":"<div><div>The ever-increasing use of composite materials in high-end structural applications calls for reliable damage diagnostics. This study proposes an innovative approach to convert a conventional glass fibre laminate into a multifunctional self-monitoring material without the need for external sensing systems. To this end, a single-walled carbon nanotube (SWCNT)-based ink is employed to establish parallel conductive paths onto glass fibre substrates via a versatile spray-coating method. The glass fibre fabrics are laid up in an alternating perpendicular direction to form a functional grid within the laminate, therefore imparting sensing capabilities. To ensure enhanced electrical performance a ternary nanomodified epoxy resin, comprising multi-walled carbon nanotube (MWCNTs) and carbon black (CB) as additives, is used. Laminates are subjected to ballistic impact, while impedance spectroscopy is utilised to detect the induced damage. The herein suggested configuration allows for localised monitoring at the intersection points of the sensing grid, thereby facilitating damage within the matrix and imparting self-sensing capabilities to the composite. Through the systematic processing of complex impedance data and the subsequent visualisation of the signal, a topographical representation of the affected area is produced. To validate the proposed damage detection methodology and strengthen the findings X-ray microcomputed tomography and infrared thermography are also employed. The successful implementation of damage mapping by exploiting a purposely designed multifunctional composite with inherent sensing capabilities demonstrates its potential as a reliable and effective Structural Health Monitoring (SHM) technique.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116643"},"PeriodicalIF":4.1,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simultaneous measurement of respiratory behavior using three different sensors: Pressure transducer-based, belt-type, and thermistor-based methods 同时测量呼吸行为使用三种不同的传感器：基于压力传感器，皮带式，热敏电阻为基础的方法

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-27 DOI: 10.1016/j.sna.2025.116632

Tatsu Kobayakawa , Naomi Gotow , Minako Hosono , Masaki Ohno , Yuki Nishida , Takuji Narumi , Yuji Wada

{"title":"Simultaneous measurement of respiratory behavior using three different sensors: Pressure transducer-based, belt-type, and thermistor-based methods","authors":"Tatsu Kobayakawa , Naomi Gotow , Minako Hosono , Masaki Ohno , Yuki Nishida , Takuji Narumi , Yuji Wada","doi":"10.1016/j.sna.2025.116632","DOIUrl":"10.1016/j.sna.2025.116632","url":null,"abstract":"<div><div>Humans perform multiple short-term rapid inspirations (MSTRIs) in one respiration to facilitate odor perception in daily life. This study first characterized each of the three different respiration sensors (pressure transducer-based, belt-type, and thermistor-based methods) by simultaneously measuring normal respiration (NR). We then examined which of the three respiration sensors could detect MSTRI. A participant was instructed to perform two MSTRIs in each inspiratory phase. An original detection algorithm was applied to analog-to-digital converted respiratory signals. The pressure transducer-based respiratory sensor had the highest detection rate of NRs, followed by the thermistor-based and belt-type respiratory sensors. In addition, each respiratory sensor was characterized by respiratory rate, latency (inspiratory and expiratory phases), and duration (single respiration, inspiratory phase, and expiratory phase), but it was difficult to explain the differences among sensors only in terms of time constant. MSTRIs could only be detected by the pressure transducer-based respiratory sensor. These results suggest that the pressure transducer-based respiratory sensor is the most suitable to measure respiratory behavior (i.e., NR and MSTRIs) among the three different respiratory sensors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116632"},"PeriodicalIF":4.1,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143882531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance transparent and broadband p-Co3O4/n-SnO2 photodetectors 高性能透明宽带p-Co3O4/n-SnO2光电探测器

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-27 DOI: 10.1016/j.sna.2025.116626

Neha Sharma , Tania Kalsi , Nupur Saxena , Ashok Bera , Pragati Kumar

{"title":"High-performance transparent and broadband p-Co3O4/n-SnO2 photodetectors","authors":"Neha Sharma , Tania Kalsi , Nupur Saxena , Ashok Bera , Pragati Kumar","doi":"10.1016/j.sna.2025.116626","DOIUrl":"10.1016/j.sna.2025.116626","url":null,"abstract":"<div><div>This work demonstrates cost-effective fabrication of SnO<sub>2</sub>/Co<sub>3</sub>O<sub>4</sub> thin films heterostructure-based p-n junction type transparent and broadband photodetectors (PDs) with substantially high figures of merit. Herein, the effects of order of stacking layers and thickness of top layer material on the transparency and photodetection performance of devices are investigated. The observed transparency (≥ 65 % beyond 380 nm) along with dark and photoconductivity depend on both the order of stacking layers and the thickness of the layers, which are explained on the basis of the bandgap of materials and interface scattering centers. The present study demonstrates that PDs performance can be tailored by an order of two by controlling these two parameters. The proposed p-n heterojunction PDs exhibit high sensitivity, responsivity, detectivity, and external quantum efficiency of the order of 10<sup>2</sup>-10<sup>5</sup>%, ∼10<sup>1</sup>-10<sup>3</sup> A/W, ∼ 10<sup>11</sup>-10<sup>14</sup> Jones, and 10<sup>3</sup>-10<sup>6</sup>%, respectively, in the broad (UV-Vis-NIR) spectral region. Remarkably, the sustainability in the performance of PDs under the illumination of visible and NIR lights with respect to the performance under UV light illumination is much better than previously designed PDs. The highest performance parameters were observed for device C<sub>15</sub>S<sub>10</sub> under the broadband spectrum (365 nm–845 nm), with a maximum value under 365 nm illumination and an average response speed of ∼225 ms.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116626"},"PeriodicalIF":4.1,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143902511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Kresling origami bellows for pneumatic pump 气动泵用Kresling折纸波纹管分析

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-27 DOI: 10.1016/j.sna.2025.116631

Seohu Lee, Youngsu Cha

引用次数: 0

Enhanced optical fiber Fabry-Perot acoustic sensor based on Mie resonant metamaterials 基于Mie谐振超材料的增强光纤Fabry-Perot声传感器

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-26 DOI: 10.1016/j.sna.2025.116611

Guoxin Cao , Zigeng Liu , Ang Li , Botao Liu , Dongdong An , Shengchun Liu

{"title":"Enhanced optical fiber Fabry-Perot acoustic sensor based on Mie resonant metamaterials","authors":"Guoxin Cao , Zigeng Liu , Ang Li , Botao Liu , Dongdong An , Shengchun Liu","doi":"10.1016/j.sna.2025.116611","DOIUrl":"10.1016/j.sna.2025.116611","url":null,"abstract":"<div><div>Advanced fiber Fabry-Perot (F-P) Acoustic sensor with anti-electromagnetic interference has been applied widely in some important monitoring fields. However, F-P acoustic sensors are limited by physical principles, and it is difficult to further improve the sensitivity and signal-to-noise ratio of the sensor. Here, a highly sensitive composite sensor, embedding a fiber F-P interferometer into a Mie resonant structure, is proposed for weak sound field detection. The customized Mie resonant metamaterials break through the sensitivity limit of F-P acoustic sensors, achieving local acoustic signal enhancement due to their high refractive index. The experimental and numerical results indicate a pressure gain of 27.60 dB and the sensor demonstrates a significant improvement in signal-to-noise ratio by 27.03 dB @1040 Hz. This technology offers a novel approach to overcoming the physical limitations of sensor detection by passively amplifying weak sound fields. The proposed sensor is suitable for applications in target azimuth identification and tracking applications.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"390 ","pages":"Article 116611"},"PeriodicalIF":4.1,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143877193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation method and system for the influence level of non-thermal effect of strong microwave electric field on dielectric properties of semiconductor materials 强微波电场非热效应对半导体材料介电性能影响程度的评价方法与体系

IF 4.1 3区工程技术

Sensors and Actuators A-physical Pub Date : 2025-04-26 DOI: 10.1016/j.sna.2025.116591

Yong Gao , Yi Zhang , Jiawei Long , Chong Gao , Yunpeng Zhang , Chengyong Yu , En Li

{"title":"Evaluation method and system for the influence level of non-thermal effect of strong microwave electric field on dielectric properties of semiconductor materials","authors":"Yong Gao , Yi Zhang , Jiawei Long , Chong Gao , Yunpeng Zhang , Chengyong Yu , En Li","doi":"10.1016/j.sna.2025.116591","DOIUrl":"10.1016/j.sna.2025.116591","url":null,"abstract":"<div><div>Strong microwave electric fields cause a nonlinear evolution of the dielectric properties of semiconductor materials, which can lead to instability or even failure of the circuits and systems in which they are applied. It is shown that the nonlinear evolution phenomenon is closely related to the non-thermal effect of strong microwave electric field. In this paper, a quantitative measurement method and system of the degree of non-thermal effects on semiconductor materials are proposed to test the non-thermal effect under the strong microwave electric field. The proposed measurement system is based on double-cavity structure, and it extracts and quantifies the non-thermal effect influence by controlling the thermal effect influence level of strong microwave electric field. In addition, a small-sample pattern matching algorithm is proposed based on the constructed measurement system, which can satisfy both the small amount of perturbation of the sample to be tested to the strong microwave electric field environment and the requirement of high accuracy for dielectric property testing. Finally, an experimental study was carried out on typical semiconductor materials, and the experimental results reveal that the non-thermal effect of a strong microwave electric field has a significant and cumulative impact on the real part of the dielectric constant of the semiconductor material, while it exhibits a minimal effect on the dielectric loss.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"391 ","pages":"Article 116591"},"PeriodicalIF":4.1,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0