Sensors and Actuators A-physical最新文献

{"title":"Accelerating target analyte measurement in resistive sensors: A multiplierless first-order differentiation method with SnS2 gas sensor","authors":"Naveen Kumar Bandari,&nbsp;Srinivasulu Kanaparthi,&nbsp;Shiv Govind Singh","doi":"10.1016/j.sna.2025.116442","DOIUrl":"10.1016/j.sna.2025.116442","url":null,"abstract":"<div><div>In various chemical sensing applications, rapid measurement of analyte concentrations is essential. While estimating the equilibrium response from initial transient responses provides a practical and cost-effective solution, existing techniques often involve extensive data, complex algorithms, or inefficiencies. This study presents a discrete multiplierless first-order differentiation method designed to expedite the measurement of NH₃ gas concentration using a resistive gas sensor composed of SnS₂ nanostructures at room temperature (25 ± 3 °C). This method significantly reduces stabilized response measurement time by transforming the sensor’s monotonically changing response into a non-monotonic one and associating the resulting peaks with NH₃ gas concentration. Specifically, it makes gas concentration determination 85–94 % faster for concentrations ranging from 42 to 105 ppm than traditional steady-state measurements. This enhanced speed makes the method well-suited for resource-limited applications requiring rapid analyte quantification.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116442"},"PeriodicalIF":4.1,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative evaluation of Al/chlorophyll/p-Si/Al device under varying irradiance intensity: Machine learning modeling vs. experimental data","authors":"F.S. Kaya ,&nbsp;I. Orak ,&nbsp;Z. Balcı ,&nbsp;Z. Kılıç","doi":"10.1016/j.sna.2025.116469","DOIUrl":"10.1016/j.sna.2025.116469","url":null,"abstract":"<div><div>This study investigated the effect of chlorophyll, a natural photosynthetic pigment, on solar cell characteristic parameters. Chlorophyll thin film layers were analyzed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristics of an Al/p-Si/chlorophyll/Al structure were investigated to understand the device's behavior under different light intensities. The fill factor (FF) and efficiency values (ɳ), which are the characteristic parameters of the solar cell, were calculated from the current values predicted by machine learning (ML) models using the voltage values of the Al/p-Si/chlorophyll/Al devices produced and the results obtained were compared. The results demonstrate the light intensity-dependent electrical response of the Al/p-Si/chlorophyll/Al structure and provide valuable insights for further developments in organic photodetectors and solar cell technology.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116469"},"PeriodicalIF":4.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143695991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel microwave dielectric resonator-based differential frequency sensor for angular displacement detection","authors":"A.V. Praveen Kumar,&nbsp;Premsai Regalla","doi":"10.1016/j.sna.2025.116480","DOIUrl":"10.1016/j.sna.2025.116480","url":null,"abstract":"<div><div>A differential frequency microwave sensor for angular displacement detection is reported. A metal strip-loaded cylindrical dielectric resonator (SL-CDR) is excited with a 50 Ω-microstrip transmission line through a rectangular slot made on the transmission line’s ground plane. Analysis of the transmission coefficient spectrum (|S₂₁| vs frequency) of the resulting circuit shows that for the parallel alignment of SL-CDR relative to the slot (<em>θ</em> = 0⁰), dual-transmission zeros are excited at frequencies <em>f</em>_<em>L</em> and <em>f</em>_<em>H</em>. In contrast, for the perpendicular alignment (<em>θ</em> = 90⁰), a single transmission zero is excited at <em>f</em>₀ where <em>f</em>_<em>L</em> &lt; <em>f</em>₀ &lt; <em>f</em>_<em>H</em>. When <em>θ</em> increases <em>f</em>rom 0⁰ to 90⁰, <em>f</em>_<em>L</em> increases towards <em>f</em>₀ while <em>f</em>_<em>H</em> decreases towards <em>f</em>₀. This opposing trend observed at <em>f</em>_<em>L</em> and <em>f</em>_<em>H</em> is attributed to the difference in the perturbation experienced by the respective electromagnetic modes of the SL-CDR after loading the metal strip. The resulting differential frequency parameter Δ<em>f</em> = <em>f</em>_<em>H</em><em>−f</em>_<em>L</em> is adopted to indicate <em>θ</em>, the angular displacement, following a simulation study with ANSYS HFSS. Subsequent prototype fabrication and Vector Network Analyzer (VNA) measurement confirm the simulations with 15.5 MHz/⁰ sensitivity and excellent linearity over the dynamic range of 90⁰. As the final step, the measured differential frequencies are mapped to the angular displacement (<em>θ</em>←Δ<em>f</em>) using linear inverse regression, and the extracted regression parameters confirm accurate mapping.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116480"},"PeriodicalIF":4.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143695989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical fingerprint for gas identification at room temperature using light-activated a-IGZO thin films and machine learning","authors":"Pei-Te Lin ,&nbsp;Zi-Chun Tseng ,&nbsp;Chun-Ying Huang","doi":"10.1016/j.sna.2025.116482","DOIUrl":"10.1016/j.sna.2025.116482","url":null,"abstract":"<div><div>A single metal oxide semiconductor (MOS) based gas sensor with distinct thermal fingerprints can replace gas sensor arrays using machine learning (ML) techniques. However, the gradual adjustment of operating temperatures hinders real-time monitoring capabilities and accelerates material degradation. In this study, we utilize a light-activated a-IGZO gas sensor and vary light intensities to generate optical fingerprints, replacing thermal fingerprints for gas identification. To evaluate the ability of the sensor to discriminate between O₃, NO₂, acetone, and toluene, we conducted Principal Component Analysis (PCA) based on their response features. The identification accuracy of the sensor is evaluated using four ML methods: Support Vector Machines (SVM), Naive Bayes (NB), K-nearest neighbors (KNN), and Random Forest (RF). Furthermore, the concentration prediction for each target gas is performed using linear regression and SVM regression models. These findings illustrate that employing a single light-activated a-IGZO sensor, combined with a PCA-driven ML algorithm, achieves an accuracy of over 90 % in discriminating between gas types and concentrations. This strategy paves the way for using a single MOS-based sensor for gas identification at room temperature.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116482"},"PeriodicalIF":4.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly sensitive gas permeable gelatin-polyvinyl alcohol conductive hydrogels prepared by fermentation method as wearable sensor","authors":"Wenjing Xu ,&nbsp;Xiaoyu Ma ,&nbsp;Jianan Chen ,&nbsp;Xiang Wu ,&nbsp;Qi Bao ,&nbsp;Lijun You ,&nbsp;Shaoyun Wang ,&nbsp;Caihua Xiong","doi":"10.1016/j.sna.2025.116456","DOIUrl":"10.1016/j.sna.2025.116456","url":null,"abstract":"<div><div>With the increasing demand for wearable sensing devices equipped with hydrogels for motion intent recognition and health monitoring applications, it is urgent to carry out research on enhancing their comfort and breathability. Gel/PVA/DPy breathable hydrogels with high breathability, excellent electrical conductivity, and sensing ability were prepared by the fermentation method using gelatin and polyvinyl alcohol to create a dual-network structure of hydrogels with Dopamine-modified polypyrrole(DPy) serving as a conductive filler. The prepared hydrogel film exhibits excellent air permeability (5.83 mg·cm⁻²·h⁻¹), tensile sensitivity (GF=5.14), compressive sensitivity (GF = 5.33), outstanding responsiveness to external tensile stimulation (response time of 0.30 s, recovery time of 0.20 s), and exceptional responsiveness to external compressive stimuli (response time of 0.20 s, recovery time of 0.30 s). The film is utilized as a high-sensitivity, high-precision wearable sensor for monitoring activities such as finger bending, facial micro-expressions, wrist swinging, and throat vocalizations; for real-time pressure-sensitive arrays; and for controlling electronic devices for gaming. This study offers a design concept and reference for preparing breathable hydrogel films for wearable sensors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116456"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Somatosensitive inverse artificial muscle for wearable robots","authors":"Junlin Ma ,&nbsp;Xianglin Zhang ,&nbsp;Zihan Zeng ,&nbsp;Jie Wei ,&nbsp;Yaohui Zhu ,&nbsp;Zhe Liu ,&nbsp;Yongkang Jiang ,&nbsp;Diansheng Chen","doi":"10.1016/j.sna.2025.116475","DOIUrl":"10.1016/j.sna.2025.116475","url":null,"abstract":"<div><div>Soft robotics have demonstrated significant potential in rehabilitation and wearable devices, attributed to their intrinsic compliance and safe interaction with humans. However, developing soft wearable robots with large deformation to assist the movement of human joints and simultaneously sensing the deformation remains challenging. This paper introduces a novel design of a type of compact somatosensitive inverse artificial muscle (SIAM) by directly coating sensing elements on the surface of soft actuators. We provided a theoretical model and conducted finite element simulations to analyze the impact of various parameters on the resistance of the proposed SIAM, and verified the model experimentally. Preliminary results show that the proposed SIAM is able to perform 200 % elongation with real-time length feedback. The maximum and minimum resistance of the SIAM changed by less than 5 % even after over 1000 working cycles. We further validated the effectiveness of the proposed SIAM on wearable robots in two working scenarios: elbow flexion rehabilitation and wrist flexion rehabilitation with the reduction of corresponding muscles’ activation levels from 100 % to 22.2 % and 24.3 %, respectively. Meanwhile, the SIAM could detect the joint angles with a maximum error of 2 degrees. This work provides an alternative design for soft wearable robots with high-fidelity and endurable sensing abilities.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"387 ","pages":"Article 116475"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of V2O5/porous silicon heterostructures by simple and low-cost methods, morphological, structural, optical, and electrical characterization, and their first application as photodetectors","authors":"A. Garzon-Roman ,&nbsp;C.M. Díaz-Barba ,&nbsp;D.H. Cuate-Gomez ,&nbsp;E. Sanchez-Mora ,&nbsp;M.E. de Anda-Reyes ,&nbsp;A. Romero-López ,&nbsp;C. Zúñiga-Islas ,&nbsp;W. Calleja-Arriaga","doi":"10.1016/j.sna.2025.116471","DOIUrl":"10.1016/j.sna.2025.116471","url":null,"abstract":"<div><div>This research presents the fabrication of heterostructures based on V₂O₅/porous silicon, their morphological, optical, structural, and electrical characterization, and their application as photodetectors. The fabrication of these heterostructures was performed in one step and with simple and low-cost methods compared to other more complex processes reported in the literature. The porous silicon layers were synthesized using the electrochemical anodization method and the V₂O₅ structures were obtained with the solvothermal or hydrothermal method, in this step the heterostructures were fabricated. The morphological characterization showed the formation of pores, these pores showed quasi-circular and irregular shapes, an average diameter of about 1.4 μm, and a pore length of around 22 μm perfectly aligned. The morphology of the V₂O₅ structures showed two morphologies a combination of concentric nanosheets and nanobelts with a thickness between 50 and 100 nm and a length greater than 10 μm for one sample and hollow microspheres with a diameter of about 5 μm for the second sample. The micro-Raman spectra demonstrated the formation of the orthorhombic V₂O₅ phase due to the Raman signals reported in the literature. X-ray diffraction corroborated the formation of the orthorhombic V₂O₅ phase, and it was possible to estimate the cell parameters and the size of the crystallites, which were found to be 31.5 and 16.4 nm. The optical characterization by photoluminescence showed main bands centered at 550 nm for the PS and 707 nm for the V₂O₅ structures. In addition, a passivation effect was observed after the deposition of the V₂O₅ structures on the porous silicon. Diffuse reflectance spectra together with the Kubelka-Munk method allowed us to estimate the optical bandgap which was 1.5 eV and about 2.1 eV for porous silicon and V₂O₅, respectively. Finally, electrical characterization under dark and illumination conditions showed rectifying and ohmic behaviors for the heterostructures, and a photocurrent effect was observed in the I-V curves. The photocurrent effect allowed the analysis of the I-t curves, which demonstrated the application of these heterostructures as the simplest photodetectors ever reported.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"387 ","pages":"Article 116471"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-temperature near-infrared photodetection using a semi-polar n-InN/n-Si heterostructure photodetector","authors":"Tahir Rajgoli ,&nbsp;Suhas M. Jejurikar ,&nbsp;Sandip Hinge ,&nbsp;Shashikant D. Shinde","doi":"10.1016/j.sna.2025.116439","DOIUrl":"10.1016/j.sna.2025.116439","url":null,"abstract":"<div><div>Considering the recent advancements in delivering low-cost, room-temperature operated, visible-blind infrared photodetectors for societal applications such as security and telecommunications, we demonstrate a photodetector using a semi-polar n-InN/n-Si heterostructure. We used plasma enhanced laser ablation, a novel technique, to grow semi-polar films of InN on an n-Si substrate at room temperature. Devices fabricated using this simple and resilient method demonstrated IR photodetection. The detection of IR radiation by the device is proposed to be due to enhanced photocurrent, which is caused by charge collection during the surface recombination process upon illumination with short wavelength radiations. The device properties measured using 850 nm radiation at 2 V, with the lowest lux (5000), include a photoresponsivity of 0.93, an external quantum efficiency (EQE) of 1.37, and a specific detectivity of 5.243 × 10⁷ V/lux. The rise and decay time constants of the device are approximately 90 ms and 110 ms, respectively, clearly indicating excellent sensitivity to 850 nm radiation. The performance and the mechanism of IR wavelength detection proposed here suggest the potential use of semi-polar InN films as advanced NIR optical interconnects and power monitoring devices for next-generation detectors.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"389 ","pages":"Article 116439"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143769356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of high aspect ratio AFM tips by surfactant added TMAH etching","authors":"Farheen Nasir ,&nbsp;Bo Cui","doi":"10.1016/j.sna.2025.116477","DOIUrl":"10.1016/j.sna.2025.116477","url":null,"abstract":"<div><div>Atomic Force Microscope (AFM) is an important characterization tool for researchers across various fields. AFM tips are commonly made by anisotropic etching of silicon in alkaline etchant such as potassium hydroxide (KOH), Ethylenediamine pyrocatechol (EDP) or Tetramethylammonium Hydroxide (TMAH). Etching results can be modified using additives, such as alcohol or surfactants, to the alkaline etchant. In this work we use TMAH with two nonionic surfactants, Triton X-100 and Triton X-405, to laterally etch silicon pillars – pre-patterned by dry etching on (111) oriented silicon wafer – to obtain sharp, high aspect ratio AFM tips. We investigate three different mask designs for pillar fabrication. Our results show that the silicon pillars must be at least 30 μm tall before undergoing wet etching in either pure TMAH or surfactant-enhanced TMAH; otherwise, sharp tips do not form. The process achieved a tip aspect ratio as high as 13.8, with an apex diameter as small as 8 nm without oxidation sharpening.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"388 ","pages":"Article 116477"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Porous pressure sensors from mechanisms to application: A review","authors":"Lei Wen ,&nbsp;Wentian Fan ,&nbsp;Jiahong Kang ,&nbsp;Haizhou Huang","doi":"10.1016/j.sna.2025.116461","DOIUrl":"10.1016/j.sna.2025.116461","url":null,"abstract":"<div><div>In recent years, the advancement of Internet of Things (IoT) technology has led to the continuous expansion of flexible pressure sensor applications in various fields such as human-machine interaction, health monitoring, robot control, and electronic skins (E-skins). The increasing demand for high-performance flexible pressure sensors is driven by their immense market potential. Porous structures with small elastic modulus, high porosity, and large specific surface area offer unique advantages in the design of flexible pressure sensors by mitigating the trade-off between device sensitivity and detection range. This paper provides a comprehensive summary of resistive, capacitive, piezoelectric, and triboelectric pressure sensors based on porous structures with high sensing performance. It also highlights the rational utilization of porous structures in these pressure sensors and presents the latest advancements in manufacturing techniques. Furthermore, this paper briefly introduces the current applications of porous structure-based pressure sensors especially in motion monitoring, healthcare systems, E-skins. Finally, both challenges and opportunities that lie ahead in this field are summarized.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"387 ","pages":"Article 116461"},"PeriodicalIF":4.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}