High-temperature-resistant h-BN/PVA nanocomposite-based humidity sensors for Morse code transmission and IoT-enabled wireless data acquisition

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-20 DOI:10.1016/j.sna.2025.117072

Shahzad Iqbal , Shenawar Ali Khan , Mirza Mahmood Baig , Muhammad Touqeer , Bibi Ruqia , Syed Adil Sardar , Wajid Ali , Seung Goo Lee , Woo Young Kim

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引用次数: 0

Abstract

Hexagonal boron nitride (h-BN), distinguished by its outstanding mechanical robustness, chemical inertness, and thermal resilience, was exfoliated via sonication-assisted methods to yield oxygen-functionalized nanoflakes. These nanostructures were homogeneously integrated into a polyvinyl alcohol (PVA) matrix to fabricate a flexible h-BN/PVA nanocomposite, employed as a super-active layer in a capacitive humidity sensor based on an interdigitated electrode design. The sensor exhibited a high sensitivity of 0.964 nF per %RH, particularly effective in low-humidity regimes. Notably, it demonstrated rapid response and recovery dynamics, along with excellent mechanical durability (tensile strength of 2.7 MPa) and thermal stability up to 70°C. The multifunctionality of the device was validated through real-time respiratory and proximity monitoring, wireless Internet of Things (IoT) integration, and Morse code signal transmission, underscoring its promise for next-generation wearable and smart sensing technologies.

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耐高温h-BN/PVA纳米复合材料湿度传感器，用于莫尔斯电码传输和物联网无线数据采集

六方氮化硼（h-BN）具有优异的机械稳健性、化学惰性和热弹性，通过超声辅助方法剥离得到氧功能化纳米片。将这些纳米结构均匀地集成到聚乙烯醇（PVA）基体中，制备出柔性的h-BN/PVA纳米复合材料，作为超活性层应用于基于交叉指状电极设计的电容式湿度传感器中。该传感器具有0.964 nF / %RH的高灵敏度，在低湿度环境下特别有效。值得注意的是，它具有快速的响应和恢复动力学，以及出色的机械耐久性（抗拉强度为2.7 MPa）和高达70°C的热稳定性。该设备的多功能性通过实时呼吸和近距离监测、无线物联网（IoT）集成和莫尔斯电码信号传输进行了验证，强调了其对下一代可穿戴和智能传感技术的承诺。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...