一种深度可定制的双面3D神经探针阵列,用于同时研究多个大脑区域

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sehwan Park , Minseok Kim , Haeyun Lee , Jimin Lee , Namsun Chou , Hyogeun Shin
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引用次数: 0

摘要

理解大脑内部复杂的神经回路需要先进的工具,能够同时记录来自多个区域和深度的信号。然而,先前开发的工具在解决大脑三维结构方面的能力有限,因为它们通常具有固定的探针长度和单面电极配置。为了克服这些挑战,我们通过柔性印刷电路板技术开发了一种深度定制的3D电极阵列结构,包括双面2D神经探针阵列,具有零插入力连接器和支撑板,无需额外的制造步骤。这使得精确的深度调整和双面电极配置有效地增加了记录位点的数量,从而促进了体积和全面的神经信号采集。我们的设备允许用户自定义调整探针间距,实现最小探针间距离1 mm,并能够微调插入深度以精确靶向特定大脑区域,最大深度差仅为0.168 mm。此外,通过采用PSR油墨绝缘层,我们实现了总探头厚度约为80 µm,从而实现了紧凑的设计,消除了对复杂半导体工艺的需求。该设备在体内的验证证明了其同时监测来自多个大脑区域的神经信号的能力。其深度可定制的设计促进了不同深度的功能连接研究,其结果可以为神经网络动力学提供关键见解。我们的方法显著提高了神经探针的灵活性、可扩展性和效率,为脑机接口开发和功能连接等领域的神经科学研究提供了一个强大的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A depth-customizable double-sided 3D neural probe array for simultaneous investigation of multiple brain regions
Understanding the complex neural circuits within the brain requires advanced tools capable of simultaneously recording signals from multiple regions and depths. However, previously developed tools have limited capability to address 3D structures in the brain as they typically feature fixed probe lengths and single-sided electrode configurations. To overcome these challenges, we developed a depth-customizable 3D electrode array structure comprising double-sided 2D neural probe arrays via flexible printed circuit board technology with a zero-insertion-force connector and a supporting board without requiring additional fabrication steps. This enables precise depth adjustments and the double-sided electrode configuration effectively doubles the number of recording sites, thereby facilitating volumetric and comprehensive neural signal acquisition. Our device allows user-defined adjustment of probe spacing, achieving a minimum inter-probe distance of 1 mm, and enables fine-tuned control of insertion depth for precise targeting of specific brain regions, with a maximum depth difference of only 0.168 mm. Also, by employing a PSR ink insulation layer, we achieved a total probe thickness of approximately 80 µm, resulting in a compact design that eliminates the need for complex semiconductor processes. Validation of the device in vivo demonstrated its capability to simultaneously monitor neural signals from multiple brain regions. Its depth-customizable design facilitated functional connectivity studies across various depths, the results of which could provide critical insights into neural network dynamics. Our approach significantly enhances the flexibility, scalability, and efficiency of neural probes and provides a powerful platform for neuroscience research into areas such as brain-machine interface development and functional connectivity.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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