In/Mg共掺杂P3HT-ZnO纳米复合材料制备室温异丙醇传感器

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Maher Jdir , Saba Aziz , Marwa El Beji , Anna Grazia Monteduro , Giuseppe Maruccio , Mohsen Erouel , Slah Mansouri , Lassaad El Mir
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引用次数: 0

摘要

研制了一种基于纳米复合聚(3-己基噻吩)(P3HT)/ (In, Mg)共掺杂ZnO作为活性层的新型室温气体传感器,用于室温异丙醇检测。采用溶胶-凝胶法制备(In, Mg)共掺杂ZnO纳米粒子,将其分散在P3HT基体中,然后自旋涂覆在互指电极上形成传感层。x射线衍射表征了(In, Mg)共掺杂ZnO的薄膜结晶度高,晶粒尺寸为27-45 nm。x射线光电子能谱(XPS)分析揭示了氧化锌晶格中掺杂了铟和镁。紫外可见光谱显示,ZnO和P3HT在紫外区和可见光区均有较高的吸收,对应于ZnO和P3HT的最大吸收。在室温下对传感器进行了异丙醇测试。发现聚(3-己基噻吩)/(In,Mg)共掺杂ZnO的传感器表现出最佳的传感性能。最后给出了与传感性能增强相对应的一个特殊结果。在共掺杂样品中可以观察到各掺杂元素的协同效应。事实上,铟提高了复合薄膜的灵敏度。同时,镁减少了响应时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Room-temperature isopropanol sensor via In/Mg co-doped P3HT-ZnO nanocomposite with enhanced selectivity
A novel room-temperature gas sensor based on nanocomposite poly (3-hexylthiophene) (P3HT)/ (In, Mg) co-doped ZnO as an active layer is developed for room-temperature isopropanol detection application. The (In, Mg) co-doped ZnO nanoparticles were synthesised by the sol-gel method and dispersed in the P3HT matrix before spin-coating on interdigitated electrodes to form the sensing layer. Thin films are characterised by X-ray diffraction, high crystallinity of (In, Mg) co-doped ZnO, and a crystalline size of 27–45 nmwas found.The X-ray photoelectron spectroscope (XPS) analysis reveals the incorporation of indium and magnesium into the ZnO lattice. The UV–visible spectroscopy showed high absorption in the UV and visible regions, corresponding to ZnO and P3HT maximum absorption. The sensors were tested on isopropanol at room temperature. It was found that sensors poly (3-hexylthiophene)/(In,Mg) co-doped ZnO exhibit the best sensing performance. A particular result corresponding to the enhancement of sensing performance was illustrated. The synergy effect of each doping element can be observed in the co-doped samples. Indeed, the indium improves the sensitivity of the composite thin films. At the same time, magnesium reduces the response times.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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