MOF synthesis of Sn-doped Co3O4 nanosheets for trace carbon monoxide gas sensing

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Amensisa Negasa Begi , Zhihao Li , Bin Liu , Lemi Lechisa Sirnessa , Jesse Nii Okai Amu-Darko , Shahid Hussain , Guiwu Liu , Hongchao Wang
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Abstract

Significant promise for carbon monoxide (CO) detection has been shown by a recently developed Sn-doped Co3O4 nanosheet material. Sn-doped Co3O4 nanosheets with different Sn concentrations were synthesized using a simple solvothermal technique. A response value of 31 toward 50 ppm of CO at 150 °C was obtained by analyzing the effect of Sn doping on the CO detection capability, which showed a significant improvement in both sensitivity and selectivity. Furthermore, the effect of relative humidity was evaluated at a fixed CO concentration of 30 ppm, and the Sn-doped Co3O4 nanosheets were found to have good humidity resistance. The calculated detection and quantification limits confirmed the accuracy and reliability of the sensor for CO measurements. Overall, our results highlight Sn-doped Co3O4 nanosheets as highly effective CO sensors, where Sn incorporation enhances the sensing capability by generating more oxygen vacancies and active adsorption sites, making them attractive for practical CO monitoring applications in diverse industries.
微量一氧化碳气体传感用掺锡Co3O4纳米片的MOF合成
最近开发的一种掺锡Co3O4纳米片材料显示了一氧化碳(CO)检测的重大前景。采用简单的溶剂热法合成了不同锡浓度的掺杂锡的Co3O4纳米片。通过分析锡掺杂对CO检测能力的影响,得到了CO在150℃下对50 ppm的响应值为31,在灵敏度和选择性上都有显著提高。此外,在固定CO浓度为30 ppm的条件下,研究了相对湿度对纳米片的影响,发现掺锡的Co3O4纳米片具有良好的耐湿性。计算出的检测限和定量限证实了传感器测量CO的准确性和可靠性。总的来说,我们的研究结果强调了锡掺杂的Co3O4纳米片是高效的CO传感器,其中锡的掺入通过产生更多的氧空位和活性吸附位点来增强传感能力,使其在不同行业的实际CO监测应用中具有吸引力。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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