Amensisa Negasa Begi , Zhihao Li , Bin Liu , Lemi Lechisa Sirnessa , Jesse Nii Okai Amu-Darko , Shahid Hussain , Guiwu Liu , Hongchao Wang
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引用次数: 0
Abstract
Significant promise for carbon monoxide (CO) detection has been shown by a recently developed Sn-doped Co3O4 nanosheet material. Sn-doped Co3O4 nanosheets with different Sn concentrations were synthesized using a simple solvothermal technique. A response value of 31 toward 50 ppm of CO at 150 °C was obtained by analyzing the effect of Sn doping on the CO detection capability, which showed a significant improvement in both sensitivity and selectivity. Furthermore, the effect of relative humidity was evaluated at a fixed CO concentration of 30 ppm, and the Sn-doped Co3O4 nanosheets were found to have good humidity resistance. The calculated detection and quantification limits confirmed the accuracy and reliability of the sensor for CO measurements. Overall, our results highlight Sn-doped Co3O4 nanosheets as highly effective CO sensors, where Sn incorporation enhances the sensing capability by generating more oxygen vacancies and active adsorption sites, making them attractive for practical CO monitoring applications in diverse industries.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...