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IEEE Conference on Photovoltaic Specialists最新文献

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Terrestrial photovoltaics systems for US military applications 美国军用地面光伏系统
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111792
R. Ducey, G.D. Smith, L.E. Humble, L. W. Strother, K. Agi, A. Seiss, J. Hoelscher
{"title":"Terrestrial photovoltaics systems for US military applications","authors":"R. Ducey, G.D. Smith, L.E. Humble, L. W. Strother, K. Agi, A. Seiss, J. Hoelscher","doi":"10.1109/PVSC.1990.111792","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111792","url":null,"abstract":"An attempt is made to heighten the photovoltaics community's awareness of the US Department of Defense's (DODs) PV Review Committee, an organized group of specialists within the three DOD military services and the US Coast Guard who can be approached concerning PV opportunities. The various PV military applications already installed and trends of PV use within the military are summarized. It is pointed out that the trend within the military is toward increased use of photovoltaics.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"280 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122538191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A review of indium phosphide space solar cell fabrication technology 磷化铟空间太阳能电池制备技术综述
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111617
M. Spitzer, B. Dingle, J. Dingle, R. Morrison
{"title":"A review of indium phosphide space solar cell fabrication technology","authors":"M. Spitzer, B. Dingle, J. Dingle, R. Morrison","doi":"10.1109/PVSC.1990.111617","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111617","url":null,"abstract":"A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124552685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Tin oxide electrodes for a-Si:H solar cells deposited by spray pyrolysis technique 喷雾热解法制备a-Si:H太阳能电池氧化锡电极
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111879
A. Antonaia, S. Aprea, P. Menna
{"title":"Tin oxide electrodes for a-Si:H solar cells deposited by spray pyrolysis technique","authors":"A. Antonaia, S. Aprea, P. Menna","doi":"10.1109/PVSC.1990.111879","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111879","url":null,"abstract":"A spray pyrolysis technique for the deposition of low-cost, high-quality fluorine-doped tin oxide layers for amorphous silicon solar cells has been developed. The process is carried out in two separate phases whose durations have been optimized according to the quality of the deposited material. Tin oxide films with a resistivity of 10/sup -4/ Omega -cm and an absorption coefficient, of about 1000 cm/sup -1/ (at 600 nm) have been prepared in the temperature range from 350 to 500 degrees C. A good uniformity of the electrical and optical properties has been obtained for areas of deposition up to 100 cm/sup 2/. The optimized growth conditions are provided.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121060849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peeled film GaAs solar cell development 剥膜砷化镓太阳能电池的发展
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111601
D. Wilt, R. Thomas, S. Bailey, D. Brinker, F.L. DeAngelo, N. Fatemi, G. Landis
{"title":"Peeled film GaAs solar cell development","authors":"D. Wilt, R. Thomas, S. Bailey, D. Brinker, F.L. DeAngelo, N. Fatemi, G. Landis","doi":"10.1109/PVSC.1990.111601","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111601","url":null,"abstract":"Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10/sup 6/) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid (HF). The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide (Al/sub x/Ga/sub 1-x/As) window and antireflective (AR) coating, has a V/sub oc/ of 874 mV and a fill factor of 68% under AM0 illumination.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121268878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Effects of heavy impurity doping on the np product in p-GaAs 重杂质掺杂对p-GaAs中np产物的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111665
M. Klausmeier-Brown, M. Melloch, M. Lundstrom
{"title":"Effects of heavy impurity doping on the np product in p-GaAs","authors":"M. Klausmeier-Brown, M. Melloch, M. Lundstrom","doi":"10.1109/PVSC.1990.111665","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111665","url":null,"abstract":"Heavy impurity doping has a strong effect on the np product, or n/sup 2//sub ie/, in p-GaAs. The authors' initial work made use of a successive etch technique to extract the electron injection current, in p-n diodes and to measure n/sup 2//sub ie/D/sub n/ up to N/sub A/ approximately=10/sup 19/ cm/sup -3/. The authors have used a new approach, analysis of the collector current in n-p-n homojunction bipolar transistors. Because this approach isolates the current of interest, it offered increased accuracy and allowed the extension of the measurements to N/sub A/ approximately=10/sup 20/ cm/sup -3/. The new measurements confirm the diode-based data below 10/sup 19/ cm/sup -3/ but show that its extrapolation above 10/sup 19/ cm/sup -3/ would yield incorrect results. The authors' previous work on the implications of effective bandgap shrinkage for GaAs-based solar cells is reassessed in light of the more recent data.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128668558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Texture: a ray tracing program for the photovoltaic community 纹理:为光伏社区的光线追踪程序
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111660
A.W. Smith, A. Rohatgi, S. Neel
{"title":"Texture: a ray tracing program for the photovoltaic community","authors":"A.W. Smith, A. Rohatgi, S. Neel","doi":"10.1109/PVSC.1990.111660","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111660","url":null,"abstract":"Increased interest in light-trapping techniques to enhance the output current of silicon solar cells has led to a variety of surface texturing designs. Unfortunately, the inability to quantify and eliminate some of the photon loss mechanisms have not allowed textured cells to reach their full potential. Texture, a Monte Carlo ray-tracing program which is capable of addressing the above issues, has been written. The program has a convenient user interface and a variety of output modes. Different material systems, such as GaAs, InP, and thin films on textured glass, can also be modeled by Texture. It is shown that the output of the Texture program compares quite favorably with results of other researchers under the same assumptions. The program also provides additional quantitative information about photon losses due to the sides of the cell, grid absorption, and imperfect back-surface reflectance. Output results show that tetrahedrons are more effective light-trapping structures than tilted pyramids (40.87 mA compared to 40.37 mA).<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117000180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells 第一性原理计算机模型显示p层厚度和前接触势垒高度对a-Si:H - p-i-n太阳能电池性能的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111886
J. Arch, F. Rubinelli, J. Hou, S. Fonash
{"title":"First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells","authors":"J. Arch, F. Rubinelli, J. Hou, S. Fonash","doi":"10.1109/PVSC.1990.111886","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111886","url":null,"abstract":"The performance of a-Si:H p-i-n solar cells with different p-layer thicknesses, front contact barrier heights, and front contact/p-layer hole transport mechanisms were modeled. The authors examined how p-layer material and contact quality influenced the results obtained, and they also explored the role that tunneling of holes across the barrier near the front contact can play in determining cell performance. It was found that, for active p-layer cells with the optimistic p-layer activation energy of 0.27 eV, cell performance is maximum for a p-layer thickness of about 100 AA. However, this maximum depends on the quality of the p-layer. Surprisingly, it was found that, for front contact barrier height values less than some critical value, cell performance, in the absence of tunneling, depends on the front contact barrier height regardless of the thickness or quality of the p-layer.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117226367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Intensity effects in monitoring carrier lifetime measurements 监测载波寿命测量中的强度效应
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111647
D. Marvin, L. Halle
{"title":"Intensity effects in monitoring carrier lifetime measurements","authors":"D. Marvin, L. Halle","doi":"10.1109/PVSC.1990.111647","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111647","url":null,"abstract":"The use of III-V compounds such as GaAs and AlGaAs in advanced solar cells has led to extensive use of transient photoluminescence technique to measure minority carrier lifetimes in these materials. A study of an intensity dependence of the observed carrier lifetime in AlGaAs samples in the low-intensity regime is described. It is shown that light intensities typically used for these measurements result in an effective lifetime that is a linear combination of the minority and majority carrier values. It is further shown that a series of measurements over a range of light intensities can be analyzed to yield the minority and majority carrier lifetimes and the equilibrium carrier concentration in the sample.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114518175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Defect generation/passivation by low energy hydrogen implant for silicon solar cells 低能量氢植入硅太阳能电池的缺陷产生/钝化
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111699
B. Sopori, T. Zhou, G. Rozgonyi
{"title":"Defect generation/passivation by low energy hydrogen implant for silicon solar cells","authors":"B. Sopori, T. Zhou, G. Rozgonyi","doi":"10.1109/PVSC.1990.111699","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111699","url":null,"abstract":"Low-energy ion implant in silicon is shown to produce defects including surface damage, hydrogen agglomeration, formation of platelets with","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125314366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
OBIC studies: Classification of structural defects and their influence on the performance of MOCVD grown GaAs solar cells OBIC研究:结构缺陷的分类及其对MOCVD生长GaAs太阳能电池性能的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111646
X. Tang, Paul Boots, L. Giling
{"title":"OBIC studies: Classification of structural defects and their influence on the performance of MOCVD grown GaAs solar cells","authors":"X. Tang, Paul Boots, L. Giling","doi":"10.1109/PVSC.1990.111646","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111646","url":null,"abstract":"By means of the OBIC (optical beam induced current) technique, where a focused laser spot of about 6 mu m in diameter is used in combination with a computer-controlled translation mechanism and data acquisition system, the spatially resolved structural behavior of metalorganic chemical vapor deposition (MOCVD)-grown GaAs solar cells was studied. The overall performance of the cells was studied as a function of the difference in the GaAs substrate and the MOCVD growth conditions. A classification has been made for typical defects that either originated from the substrate or were created during the MOCVD growth. The study of the oval defects in the grown layers was emphasized. It was found that ovals with a polycrystalline center have a strong effect on the local response, as was expected from the short diffusion length of the minority carriers. Some oval defects have a region around them in which the OBIC response is improved compared with the defect-free surface, indicating a locally better solar cell performance.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125571795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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