{"title":"Tin oxide electrodes for a-Si:H solar cells deposited by spray pyrolysis technique","authors":"A. Antonaia, S. Aprea, P. Menna","doi":"10.1109/PVSC.1990.111879","DOIUrl":null,"url":null,"abstract":"A spray pyrolysis technique for the deposition of low-cost, high-quality fluorine-doped tin oxide layers for amorphous silicon solar cells has been developed. The process is carried out in two separate phases whose durations have been optimized according to the quality of the deposited material. Tin oxide films with a resistivity of 10/sup -4/ Omega -cm and an absorption coefficient, of about 1000 cm/sup -1/ (at 600 nm) have been prepared in the temperature range from 350 to 500 degrees C. A good uniformity of the electrical and optical properties has been obtained for areas of deposition up to 100 cm/sup 2/. The optimized growth conditions are provided.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Photovoltaic Specialists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1990.111879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A spray pyrolysis technique for the deposition of low-cost, high-quality fluorine-doped tin oxide layers for amorphous silicon solar cells has been developed. The process is carried out in two separate phases whose durations have been optimized according to the quality of the deposited material. Tin oxide films with a resistivity of 10/sup -4/ Omega -cm and an absorption coefficient, of about 1000 cm/sup -1/ (at 600 nm) have been prepared in the temperature range from 350 to 500 degrees C. A good uniformity of the electrical and optical properties has been obtained for areas of deposition up to 100 cm/sup 2/. The optimized growth conditions are provided.<>