D. Wilt, R. Thomas, S. Bailey, D. Brinker, F.L. DeAngelo, N. Fatemi, G. Landis
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Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10/sup 6/) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid (HF). The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide (Al/sub x/Ga/sub 1-x/As) window and antireflective (AR) coating, has a V/sub oc/ of 874 mV and a fill factor of 68% under AM0 illumination.<>
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