Defect generation/passivation by low energy hydrogen implant for silicon solar cells

B. Sopori, T. Zhou, G. Rozgonyi
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引用次数: 2

Abstract

Low-energy ion implant in silicon is shown to produce defects including surface damage, hydrogen agglomeration, formation of platelets with
低能量氢植入硅太阳能电池的缺陷产生/钝化
低能离子注入硅中会产生缺陷,包括表面损伤、氢聚集、血小板形成等
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