第一性原理计算机模型显示p层厚度和前接触势垒高度对a-Si:H - p-i-n太阳能电池性能的影响

J. Arch, F. Rubinelli, J. Hou, S. Fonash
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引用次数: 5

摘要

模拟了不同p层厚度、前接触势垒高度和前接触/p层空穴输运机制下a-Si:H - p-i-n太阳能电池的性能。作者研究了p层材料和触点质量如何影响得到的结果,他们还探索了在靠近前触点的屏障上穿洞在决定电池性能方面所起的作用。结果表明,当p层活化能为0.27 eV时,当p层厚度约为100 AA时,电池性能达到最大值。然而,这个最大值取决于p层的质量。令人惊讶的是,我们发现,当前接触势垒高度小于某个临界值时,无论p层的厚度或质量如何,在没有隧穿的情况下,电池的性能取决于前接触势垒高度
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First principles computer model showing the effect of p-layer thickness and front contact barrier height on the performance of a-Si:H p-i-n solar cells
The performance of a-Si:H p-i-n solar cells with different p-layer thicknesses, front contact barrier heights, and front contact/p-layer hole transport mechanisms were modeled. The authors examined how p-layer material and contact quality influenced the results obtained, and they also explored the role that tunneling of holes across the barrier near the front contact can play in determining cell performance. It was found that, for active p-layer cells with the optimistic p-layer activation energy of 0.27 eV, cell performance is maximum for a p-layer thickness of about 100 AA. However, this maximum depends on the quality of the p-layer. Surprisingly, it was found that, for front contact barrier height values less than some critical value, cell performance, in the absence of tunneling, depends on the front contact barrier height regardless of the thickness or quality of the p-layer.<>
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