{"title":"Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells","authors":"M. Nadir","doi":"10.1109/NUSOD.2003.1259046","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259046","url":null,"abstract":"A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122636448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity","authors":"G. Slavcheva, J. Arnold","doi":"10.1109/NUSOD.2003.1259057","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259057","url":null,"abstract":"The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121002256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Lysak, H. Kawaguchi, T. Katayama, I. Sukhoivanov
{"title":"Amplification and saturation properties of asymmetrical multiple quantum-well traveling wave semiconductor optical amplifiers","authors":"V. Lysak, H. Kawaguchi, T. Katayama, I. Sukhoivanov","doi":"10.1109/NUSOD.2003.1259054","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259054","url":null,"abstract":"A numerical model for calculation of the steady state gain properties for asymmetrical multiple quantum-well travelling wave semiconductor optical amplifiers (AMQW TW SOAs) has been newly developed. This model consists from the rate equation system for carriers in each quantum well and integrated gain model. Using this model the gain spectra and saturation characteristics for a 6 AQW TW SOA is calculated. The results show the AMQW SOA has a wide bandwidth of about 137 nm and a large saturation power of -8.8 dBm at 202 mA.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121401632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. H. Kim, C. Son, Young Il Kim, Y. Byun, Y. Jhon, Geok Lee, D. Woo, S. H. Kim
{"title":"All-optical signal processing using semiconductor optical amplifier based logic gates","authors":"J. H. Kim, C. Son, Young Il Kim, Y. Byun, Y. Jhon, Geok Lee, D. Woo, S. H. Kim","doi":"10.1109/NUSOD.2003.1263226","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263226","url":null,"abstract":"Some of all-optical signal processing techniques using all-optical logic gates based on semiconductor optical amplifiers have been demonstrated at 10 Gbps. The primary techniques for all-optical signal processing such as label swapping and data extraction are successfully demonstrated using VPI simulation tool lntroductlon As the speed of telecommunication systems increases and reaches the limit of electronic devices, the demands for all-optical signal processing techniques such as label or packet switching, decision making, regenerating, and basic or complex computing are rapidly increasing. Current communication systems usually require various ailoptical logic gates such as AND, OR, XOR, NAND, NOR, and XNOR. However, their applications are very limited to small numbers [ l , 21. Also, logic implementation techniques are usually limited to mach-zehnder interferometer and fiber-based devices while our logic gates are mostly based on semiconductor optical amplifiers (SOA?. ) In this paper, the primary techniques of all-optical label swapping and data extraction using semiconductor optical amplifiers are demonstrated at 10 Gbps using VPI simulation tool. Operation principles In this paper, to implement the all-optical label swapping and data extraction among various alloptical signal processing techniques, only one mechanism that is cross-gain modulation (XGM) of SOAs is used. To realize the all-optical label swapping, an all-optical XOR gate using two SOAs is utilized. Operation principle of the XOR gate is shown in Fig. 1 [3].","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124408855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Designing high-power single-frequency lasers","authors":"H. Wenzel","doi":"10.1109/NUSOD.2003.1259037","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259037","url":null,"abstract":"The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134118418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of whispering gallery mode resonators by using airy functions","authors":"N. Cinosi, J. Sarma, D. Mencarelli, F. Causa","doi":"10.1109/NUSOD.2003.1259053","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259053","url":null,"abstract":"In this paper, airy functions to represent Bessel functions of large index order are applied. The eigenvalue wave equation is then reduced to a polynomial equation. The complex roots of such a polynomial are the sought whispering gallery modes (WGM) resonant frequencies which in effect, provide the Q-factors and determine the WGM field profiles. Particular emphasis has been given to deriving the spectral and spatial distribution of WGMs, along the Q-factors of the resonators. These properties are essential to characterise circular semiconductor lasers, which use WGMs as modal emission.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131793690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Uniform optical pumping design for 1.55 /spl mu/m VCSELs","authors":"J. Geske, J. Piprek","doi":"10.1109/NUSOD.2003.1259044","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259044","url":null,"abstract":"Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133987771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Avrutin, J. Arnold, V. Nikolaev, C. Xing, D. Gallagher
{"title":"Modelling monolithic mode-locked semiconductor lasers","authors":"E. Avrutin, J. Arnold, V. Nikolaev, C. Xing, D. Gallagher","doi":"10.1109/NUSOD.2003.1259055","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259055","url":null,"abstract":"We discuss current and potential problems in theory and numerical modelling of monolithic mode-locked semiconductor lasers, present some recent advances in the field and compare advantages and shortcomings of time- and time-frequency domain modelling approaches.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"26 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132394259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Validation of SiC photodetectors response","authors":"K. K. Lee, J. S. Laird, T. Ohshima, T. Kamiya","doi":"10.1109/NUSOD.2003.1263224","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263224","url":null,"abstract":"In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115120807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A numerical method for tunable filter with weighted coupling","authors":"J.S. Yang, G. Fan, J.P. Zhu, C. Sun, Y.H. Zhu","doi":"10.1109/NUSOD.2003.1259050","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259050","url":null,"abstract":"A new approach based on the finite element-artificial transmitting boundary method was presented and numerical examples are shown for AOTF's with a tapered acoustical directional coupler on a LiNbO/sub 3/.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}