{"title":"SiC光电探测器响应的验证","authors":"K. K. Lee, J. S. Laird, T. Ohshima, T. Kamiya","doi":"10.1109/NUSOD.2003.1263224","DOIUrl":null,"url":null,"abstract":"In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Validation of SiC photodetectors response\",\"authors\":\"K. K. Lee, J. S. Laird, T. Ohshima, T. Kamiya\",\"doi\":\"10.1109/NUSOD.2003.1263224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1263224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1263224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.