半导体微腔非线性增益动态及调制响应的FDTD仿真

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259057

G. Slavcheva, J. Arnold

{"title":"半导体微腔非线性增益动态及调制响应的FDTD仿真","authors":"G. Slavcheva, J. Arnold","doi":"10.1109/NUSOD.2003.1259057","DOIUrl":null,"url":null,"abstract":"The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity\",\"authors\":\"G. Slavcheva, J. Arnold\",\"doi\":\"10.1109/NUSOD.2003.1259057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259057\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259057","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用时域有限差分法求解一维双能级量子系统的全波矢量Maxwell-Bloch方程，研究了有源半导体微腔的非线性增益时空动力学。实验结构为15 /spl mu/m长的有源介质板(GaAs)，在其左边界发射一个原子跃迁频率(/spl lambda/ = 1.5 /spl mu/m)的连续波正弦波源场(在5周期内平滑导通)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity

The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

自引率

0.00%

发文量