基于GaInNAs-GaAs多量子阱的垂直腔面发射激光器模拟

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259046

M. Nadir

{"title":"基于GaInNAs-GaAs多量子阱的垂直腔面发射激光器模拟","authors":"M. Nadir","doi":"10.1109/NUSOD.2003.1259046","DOIUrl":null,"url":null,"abstract":"A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells\",\"authors\":\"M. Nadir\",\"doi\":\"10.1109/NUSOD.2003.1259046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于N掺杂和p掺杂Al/sub 0.143/Ga/sub 0.857/As和AlAs，模拟了具有分布式Bragg反射镜(DBR)的Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y/ GaAs多量子阱激光器。通过改变VCSEL的结构(下圆柱体部分的直径)，可以观察到电流分布的变化。在不同的N组成下，计算了光学增益对实折射率变化的影响。本工作采用自洽建模软件PICS3D[PICS3D]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells

A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

自引率

0.00%

发文量