FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity

G. Slavcheva, J. Arnold
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Abstract

The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.
半导体微腔非线性增益动态及调制响应的FDTD仿真
采用时域有限差分法求解一维双能级量子系统的全波矢量Maxwell-Bloch方程,研究了有源半导体微腔的非线性增益时空动力学。实验结构为15 /spl mu/m长的有源介质板(GaAs),在其左边界发射一个原子跃迁频率(/spl lambda/ = 1.5 /spl mu/m)的连续波正弦波源场(在5周期内平滑导通)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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