非对称多量子阱行波半导体光放大器的放大和饱和特性

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259054

V. Lysak, H. Kawaguchi, T. Katayama, I. Sukhoivanov

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引用次数: 5

摘要

建立了一种计算非对称多量子阱行波半导体光放大器稳态增益特性的数值模型。该模型由每个量子阱中载流子的速率方程系统和集成增益模型组成。利用该模型计算了6 aqwtw SOA的增益谱和饱和特性。结果表明，AMQW SOA具有约137 nm的宽带带宽和-8.8 dBm的饱和功率。

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Amplification and saturation properties of asymmetrical multiple quantum-well traveling wave semiconductor optical amplifiers

A numerical model for calculation of the steady state gain properties for asymmetrical multiple quantum-well travelling wave semiconductor optical amplifiers (AMQW TW SOAs) has been newly developed. This model consists from the rate equation system for carriers in each quantum well and integrated gain model. Using this model the gain spectra and saturation characteristics for a 6 AQW TW SOA is calculated. The results show the AMQW SOA has a wide bandwidth of about 137 nm and a large saturation power of -8.8 dBm at 202 mA.

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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