发布求助
文献互助 智能选刊 最新文献

设计高功率单频激光器

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259037
H. Wenzel
{"title":"设计高功率单频激光器","authors":"H. Wenzel","doi":"10.1109/NUSOD.2003.1259037","DOIUrl":null,"url":null,"abstract":"The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Designing high-power single-frequency lasers\",\"authors\":\"H. Wenzel\",\"doi\":\"10.1109/NUSOD.2003.1259037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

介绍了发射功率低于1 /spl μ m的gaas基脊波导(RW) DFB激光器的研究进展。讨论了主要的建模方面，包括器件结构、制作过程和实验结果。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
分享
查看原文 本刊更多论文
Designing high-power single-frequency lasers
The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.
求助全文
通过发布文献求助，成功后即可免费获取论文全文。 去求助
来源期刊
IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings
IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信